DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2500UFB4-7 DMN2500UFB4-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 103566-DMN2500UFB4-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: X2-DFN1006-3 Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 810mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.74nC @ 4.5V Max Input Capacitance: 60.67pF @ 16V Maximum Gate-Source Voltage: ±6V Maximum Rds On at Id,Vgs: 400 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 103566-DMN2500UFB4-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: X2-DFN1006-3 Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 810mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.74nC @ 4.5V Max Input Capacitance: 60.67pF @ 16V Maximum Gate-Source Voltage: ±6V Maximum Rds On at Id,Vgs: 400 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2500UFB4-7 - 103566-DMN2500UFB4-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2500UFB4-7
103566-DMN2500UFB4-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2500UFB4-7 103566-DMN2500UFB4-7
Manufacturer: Diodes Incorporated Win Source Part Number: 103566-DMN2500UFB4-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: X2-DFN1006-3 Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 810mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.74nC @ 4.5V Max Input Capacitance: 60.67pF @ 16V Maximum Gate-Source Voltage: ±6V Maximum Rds On at Id,Vgs: 400 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 103566-DMN2500UFB4-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 460mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 810mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.74nC @ 4.5V
Max Input Capacitance: 60.67pF @ 16V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 400 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - DMN2500UFB4-7DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2500UFB4-7DITR-ND
Single FETs, MOSFETs DMN2500UFB4-7DITR-ND
N-Channel 20V 810mA (Ta) 460mW (Ta) Surface Mount X2-DFN1006-3

N-Channel 20V 810mA (Ta) 460mW (Ta) Surface Mount X2-DFN1006-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2500UFB4-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2500UFB4-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2500UFB4-7
MOSFET N-CH 20V 810MA 3DFN

MOSFET N-CH 20V 810MA 3DFN

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 103566-DMN2500UFB4-7 DMN2500UFB4-7DITR-ND DMN2500UFB4-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2500UFB4-7 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts
PD 460 milliwatts
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