MOSFET 2N-CH 20V 1.33A SOT563
Manufacturer: Diodes Incorporated
Win Source Part Number: 014424-DMN2400UV-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN2400UV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 530mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.33A
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 0.5nC @ 4.5V
Max Input Capacitance: 36pF @ 16V
Maximum Rds On at Id,Vgs: 480 mOhm @ 200mA, 5V
Alternative Parts (Cross-Reference): CMLDM3737; CMLDM3737 TR Lead Free; CMLDM3737 TR;
Introduction Date: January 08, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 20V 1.33A SOT563 Product overview: DMN2400UV-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.33A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2400UV-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 1.33A 530mW Surface Mount SOT-563
Mosfet Array 2 N-Channel (Dual) 20V 1.33A 530mW Surface Mount SOT-563
Mosfet Array 2 N-Channel (Dual) 20V 1.33A 530mW Surface Mount SOT-563
MOSFET 2N-CH 20V 1.33A SOT563
MOSFET, AEC-Q101, DUAL N-CH, 20V, SOT563; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.33A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:900mV; RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN2400UV-7 | 014424-DMN2400UV-7 | 289-DMN2400UV-7 | DMN2400UV-7DIDKR-ND | DMN2400UV-7 | DMN2400UV-7 | 82Y6575 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2400UV-7 | 20V 1.33A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, Dual N-Ch, 20V, Sot563; Transistor Polarity Diodes Inc. |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| IDSS | 1330 milliamps | 1330 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
