DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2400UFB-7 DMN2400UFB-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014422-DMN2400UFB-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 470mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 3-X1DFN1006 Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 750mA (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 0.5nC @ 4.5V Max Input Capacitance: 36pF @ 16V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 550 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2400UFB-7 - 014422-DMN2400UFB-7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMN2400UFB-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - DMN2400UFB-7DITR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN2400UFB-7DIDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN2400UFB-7DICT-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 20V, 0.75A, X1-Dfn1006 Rohs Compliant Diodes Inc. - 28AK8518 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2400UFB-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014422-DMN2400UFB-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 470mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 3-X1DFN1006 Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 750mA (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 0.5nC @ 4.5V Max Input Capacitance: 36pF @ 16V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 550 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2400UFB-7 - 014422-DMN2400UFB-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2400UFB-7
014422-DMN2400UFB-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2400UFB-7 014422-DMN2400UFB-7
Manufacturer: Diodes Incorporated Win Source Part Number: 014422-DMN2400UFB-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 470mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 3-X1DFN1006 Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 750mA (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 0.5nC @ 4.5V Max Input Capacitance: 36pF @ 16V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 550 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 014422-DMN2400UFB-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 470mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-X1DFN1006
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 750mA (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 0.5nC @ 4.5V
Max Input Capacitance: 36pF @ 16V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 550 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - DMN2400UFB-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN2400UFB-7
Single FETs, MOSFETs DMN2400UFB-7
MOSFET N-CH 20V 750MA 3DFN

MOSFET N-CH 20V 750MA 3DFN

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN2400UFB-7DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2400UFB-7DITR-ND
Single FETs, MOSFETs DMN2400UFB-7DITR-ND
N-Channel 20V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3

N-Channel 20V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN2400UFB-7DIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2400UFB-7DIDKR-ND
Single FETs, MOSFETs DMN2400UFB-7DIDKR-ND
N-Channel 20V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3

N-Channel 20V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN2400UFB-7DICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2400UFB-7DICT-ND
Single FETs, MOSFETs DMN2400UFB-7DICT-ND
N-Channel 20V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3

N-Channel 20V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3

Buy Now Datasheet
Mosfet, N-Ch, 20V, 0.75A, X1-Dfn1006 Rohs Compliant Diodes Inc. - 28AK8518 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 0.75A, X1-Dfn1006 Rohs Compliant Diodes Inc.
28AK8518
Mosfet, N-Ch, 20V, 0.75A, X1-Dfn1006 Rohs Compliant Diodes Inc. 28AK8518
MOSFET, N-CH, 20V, 0.75A, X1-DFN1006 ROHS COMPLIANT: YES

MOSFET, N-CH, 20V, 0.75A, X1-DFN1006 ROHS COMPLIANT: YES

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMN2400UFB-7
MOSFET DMN2400UFB-7
MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K

MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2400UFB-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2400UFB-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2400UFB-7
MOSFET N-CH 20V 750MA 3DFN

MOSFET N-CH 20V 750MA 3DFN

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 014422-DMN2400UFB-7 DMN2400UFB-7 DMN2400UFB-7DITR-ND 28AK8518 DMN2400UFB-7 DMN2400UFB-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2400UFB-7 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 20V, 0.75A, X1-Dfn1006 Rohs Compliant Diodes Inc. MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 470 milliwatts 470 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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