Manufacturer: Diodes Incorporated
Win Source Part Number: 014422-DMN2400UFB-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 470mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-X1DFN1006
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 750mA (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 0.5nC @ 4.5V
Max Input Capacitance: 36pF @ 16V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 550 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
N-Channel 20V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3
N-Channel 20V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3
N-Channel 20V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3
MOSFET N-CH 20V 750MA 3DFN
MOSFET N-CH 20V 750MA 3DFN
MOSFET, N-CH, 20V, 0.75A, X1-DFN1006 ROHS COMPLIANT: YES
MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 014422-DMN2400UFB-7 | DMN2400UFB-7DITR-ND | DMN2400UFB-7 | DMN2400UFB-7 | 28AK8518 | DMN2400UFB-7 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2400UFB-7 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 0.75A, X1-Dfn1006 Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | ||||
| PD | 470 milliwatts | 470 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
