DIODES Incorporated Single FETs, MOSFETs DMN2320UFB4-7B

MOSFET N-CH 20V 1A X2-DFN1006-3

N-Channel 20V 1A (Ta) 520mW (Ta) Surface Mount X2-DFN1006-3

MOSFET N-CH 20V 1A X2-DFN1006-3

MOSFET N-CH 20V 1A X2-DFN1006-3 Product overview: DMN2320UFB4-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2320UFB4-7B can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 800859-DMN2320UFB4-7B
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 3-XFDFN
Power Dissipation (Maximum): 520mW
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 320mOhm at 500mA, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 0.89nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 71pF at 10V
Current - Continuous Drain (Id) at 25°C: 1A
Vgs(th) (Maximum) at Id: 950mV at 250μA
Maximum Vgs: ±8V