Manufacturer: Diodes Incorporated
Win Source Part Number: 800859-DMN2320UFB4-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 3-XFDFN
Power Dissipation (Maximum): 520mW
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 320mOhm at 500mA, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 0.89nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 71pF at 10V
Current - Continuous Drain (Id) at 25°C: 1A
Vgs(th) (Maximum) at Id: 950mV at 250μA
Maximum Vgs: ±8V
MOSFET N-CH 20V 1A X2-DFN1006-3 Product overview: DMN2320UFB4-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2320UFB4-7B can be used for catalog matching and distributor lookup.
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| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 800859-DMN2320UFB4-7B | 278-DMN2320UFB4-7B | 31-DMN2320UFB4-7BDKR-ND | 233-DMN2320UFB4-7B | 28AK8515 | DMN2320UFB4-7B | DMN2320UFB4-7B |
| Product Name | FETs - Single - DMN2320UFB4-7B | 20V 1A MOSFET Transistor | Single FETs, MOSFETs | MOSFET N-CH 20V X2-DFN1006-3 | Mosfet, N-Ch, 20V, 1A, X2-Dfn1006 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| PD | 520 milliwatts | 1.07 milliwatts | 520 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | Tape & Reel (TR) | 3-XFDFN | TO-3 | 3-XFDFN | ||
| Packing Method | Tape Reel; Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
