Manufacturer: Diodes Incorporated
Win Source Part Number: 1033733-DMN2300UFL4-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1310-6
Maximum Power Dissipation: 530mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.11A
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 1.6nC @ 4.5V
Max Input Capacitance: 64.3pF @ 25V
Maximum Rds On at Id,Vgs: 195 mOhm @ 300mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 20V 2.11A 6DFN Product overview: DMN2300UFL4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.11A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2300UFL4-7 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 2.11A 6DFN
MOSFET 2N-CH 20V 2.11A 6DFN
MOSFET 2N-CH 20V 2.11A 6DFN
Mosfet Array 2 N-Channel (Dual) 20V 2.11A (Ta) 1.39W Surface Mount X2-DFN1310-6 (Type B)
MOSFET 2N-CH 20V 2.11A 6DFN
MOSFET 2N-CH 20V 2.11A 6DFN
MOSFET, DUAL, N-CH, 20V, 2.11A ROHS COMPLIANT: YES
MOSFET 20V Dual N-Ch Enh 200mOhm 8V VGSS
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1033733-DMN2300UFL4-7 | 289-DMN2300UFL4-7 | DMN2300UFL4-7 | 31-DMN2300UFL4-7DKR-ND | 233-DMN2300UFL4-7 | DMN2300UFL4-7 | 28AK8514 | DMN2300UFL4-7 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2300UFL4-7 | 20V 2.11A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET 2N-CH 20V 2.11A 6DFN | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N-Ch, 20V, 2.11A Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | ||||
| PD | 530 milliwatts | 530 milliwatts | 1390 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; X2-DFN1310-6 | Tape & Reel (TR) | 6-XFDFN Exposed Pad | 6-XFDFN Exposed Pad | Automotive | TO-3 |
