MOSFET N-CH 20V 1.3A 3DFN Product overview: DMN2300UFB4-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2300UFB4-7B can be used for catalog matching and distributor lookup.
N-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount X2-DFN1006-3
N-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount X2-DFN1006-3
N-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount X2-DFN1006-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033734-DMN2300UFB4-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 1.6nC @ 4.5V
Max Input Capacitance: 64.3pF @ 25V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 175 mOhm @ 300mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 20V 1.3A 3DFN
MOSFET 20V N-Ch ENH Mode 175mOhm 4.5V 1.30A
MOSFET N-CH 20V 1.3A 3DFN
MOSFET, N-CH, 20V, X2DFN1006-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.175ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:950mV; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN2300UFB4-7B | DMN2300UFB4-7BDIDKR-ND | 1033734-DMN2300UFB4-7B | DMN2300UFB4-7B | DMN2300UFB4-7B | DMN2300UFB4-7B | 82Y6574 |
| Product Name | 20V 1.3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2300UFB4-7B | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, X2Dfn1006-3; Transistor Polarity Diodes Inc. |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
