MOSFET N-CH 20V 1.35A 3DFN Product overview: DMN2250UFB-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2250UFB-7B can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 1.35A 3DFN
MOSFET N-CH 20V 1.35A 3DFN
N-Channel 20V 1.35A (Ta) 500mW (Ta) Surface Mount X1-DFN1006-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 730587-DMN2250UFB-7B
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 3-DFN1006 (1.0x0.6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 3-UFDFN
Power Dissipation (Maximum): 500mW
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 1.35A
Rds On (Maximum) at Id, Vgs: 170mOhm at 1A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 3.1nC at 10V
Gate Source Voltage (Maximum): ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 94pF at 16V
MOSFET, N-CH, 20V, 1.35A, X1-DFN1006 ROHS COMPLIANT: YES
MOSFET N-CH 20V 1.35A 3DFN
MOSFET N-CH 20V 1.35A 3DFN
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMN2250UFB-7B | 31-DMN2250UFB-7BCT-ND | 730587-DMN2250UFB-7B | 28AK8512 | DMN2250UFB-7B | DMN2250UFB-7B |
| Product Name | 20V 1.35A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - DMN2250UFB-7B | Mosfet, N-Ch, 20V, 1.35A, X1-Dfn1006 Rohs Compliant Diodes Inc. | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
