DIODES Incorporated FET, MOSFET Arrays DMN2215UDM-7

MOSFET 2N-CH 20V 2A SOT-26

Manufacturer: Diodes Incorporated
Win Source Part Number: 080570-DMN2215UDM-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN2215UDM
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Maximum Power Dissipation: 650mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Input Capacitance: 188pF @ 10V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.5A, 4.5V
Alternative Parts (Cross-Reference): FDC6305N_NF40; IRF5852; TSM3900DCX6 RF;
Introduction Date: June 11, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

MOSFET 2N-CH 20V 2A SOT26 Product overview: DMN2215UDM-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2215UDM-7 can be used for catalog matching and distributor lookup.