N-Channel 20V 760mA (Ta) 380mW (Ta) Surface Mount X1-DFN1006-3
N-Channel 20V 760mA (Ta) 380mW (Ta) Surface Mount X1-DFN1006-3
N-Channel 20V 760mA (Ta) 380mW (Ta) Surface Mount X1-DFN1006-3
MOSFET N-CH 20V 760MA 3DFN Product overview: DMN21D2UFB-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 760MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 760MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN21D2UFB-7B can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 760MA 3DFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033731-DMN21D2UFB-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 380mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-DFN1006 (1.0x0.6)
Dimension: 3-UFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 760mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.93nC @ 10V
Max Input Capacitance: 27.6pF @ 16V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 990 mOhm @ 100mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K
MOSFET N-CH 20V 760MA 3DFN
MOSFET, N-CH, 20V, 0.76A, X1-DFN1006 ROHS COMPLIANT: YES
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN21D2UFB-7BDIDKR-ND | 278-DMN21D2UFB-7B | DMN21D2UFB-7B | 1033731-DMN21D2UFB-7B | DMN21D2UFB-7B | DMN21D2UFB-7B | 28AK8509 |
| Product Name | Single FETs, MOSFETs | 20V 760MA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN21D2UFB-7B | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 0.76A, X1-Dfn1006 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | 3-UFDFN | Tape & Reel (TR) | 3-UFDFN | SOT3; 3-DFN1006 (1.0x0.6) | 3-UFDFN | TO-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| PD | 380 milliwatts | 380 milliwatts | 380 milliwatts |
