DIODES Incorporated Single FETs, MOSFETs DMN21D2UFB-7

The Win Source Electronics MOSFET is an N-channel enhancement mode transistor designed for high efficiency power management applications. It features a maximum drain-source voltage (BVDSS) of 20V and offers low on-resistance values, with RDS(ON) as low as 0.99,Ѷ at a gate-source voltage (VGS) of 4.5V. The device supports continuous drain currents of up to 760mA at 25¬8C and is ESD protected, making it suitable for general-purpose interfacing and analog switching applications. This MOSFET is packaged in an ultra-small surface mount configuration (X1-DFN1006-3), with a low profile of 0.5mm maximum height. It is fully RoHS compliant and halogen-free, aligning with environmental standards. The device operates over a temperature range of -55¬8C to +150¬8C and is qualified to JEDEC standards for high reliability. The low input capacitance and fast switching speed further enhance its performance in power management functions.