The Win Source Electronics MOSFET is an N-channel enhancement mode transistor designed for high efficiency power management applications. It features a maximum drain-source voltage (BVDSS) of 20V and offers low on-resistance values, with RDS(ON) as low as 0.99,Ѷ at a gate-source voltage (VGS) of 4.5V. The device supports continuous drain currents of up to 760mA at 25¬8C and is ESD protected, making it suitable for general-purpose interfacing and analog switching applications. This MOSFET is packaged in an ultra-small surface mount configuration (X1-DFN1006-3), with a low profile of 0.5mm maximum height. It is fully RoHS compliant and halogen-free, aligning with environmental standards. The device operates over a temperature range of -55¬8C to +150¬8C and is qualified to JEDEC standards for high reliability. The low input capacitance and fast switching speed further enhance its performance in power management functions.
MOSFET BVDSS: 8V~24V X1-DFN1006-
MOSFET BVDSS: 8V~24V X1-DFN1006-
MOSFET BVDSS: 8V~24V X1-DFN1006-
Alternative Parts (Cross-Reference): Cross
Manufacturer: Diodes Incorporated
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Package: Tape & Reel (TR)
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
MOSFET BVDSS: 8V~24V X1-DFN1006- Product overview: DMN21D2UFB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 24V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 24V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN21D2UFB-7 can be used for catalog matching and distributor lookup.
MOSFET BVDSS: 8V~24V X1-DFN1006-
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 31-DMN21D2UFB-7TR-ND | 278-DMN21D2UFB-7 | DMN21D2UFB-7 | |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs | 8V 24V MOSFET Transistor | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel |
| Package Type | 3-UFDFN | SOT3 | Tape & Reel (TR) | 3-UFDFN |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 20 volts | 20 volts | ||
| PD | 380 milliwatts | 380 milliwatts |
