DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2112SN-7 DMN2112SN-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 014418-DMN2112SN-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-59-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.2A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 1mA
Max Input Capacitance: 220pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 100 mOhm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 1.2A SC59-3 Product overview: DMN2112SN-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2112SN-7 can be used for catalog matching and distributor lookup.