DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2104L-7 DMN2104L-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 108727-DMN2104L-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.3A (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Input Capacitance: 325pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 53 mOhm @ 4.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Portable Devices
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 108727-DMN2104L-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.3A (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Input Capacitance: 325pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 53 mOhm @ 4.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Portable Devices
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2104L-7 - 108727-DMN2104L-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2104L-7
108727-DMN2104L-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2104L-7 108727-DMN2104L-7
Manufacturer: Diodes Incorporated Win Source Part Number: 108727-DMN2104L-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.3A (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Input Capacitance: 325pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 53 mOhm @ 4.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Portable Devices

Manufacturer: Diodes Incorporated
Win Source Part Number: 108727-DMN2104L-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.3A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Input Capacitance: 325pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 53 mOhm @ 4.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Portable Devices

Buy Now Datasheet
Singapore
20V 4.3A SOT23 MOSFET Transistor
278-DMN2104L-7
20V 4.3A SOT23 MOSFET Transistor 278-DMN2104L-7
MOSFET N-CH 20V 4.3A SOT23-3 Product overview: DMN2104L-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.3A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.3A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2104L-7 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 4.3A SOT23-3 Product overview: DMN2104L-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.3A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.3A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2104L-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN2104LDITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2104LDITR-ND
Single FETs, MOSFETs DMN2104LDITR-ND
N-Channel 20V 4.3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3

N-Channel 20V 4.3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2104L-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2104L-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2104L-7
MOSFET N-CH 20V 4.3A SOT23-3

MOSFET N-CH 20V 4.3A SOT23-3

Supplier's Site
MOSFET SINGLE N-CHANNEL - 233-DMN2104L-7 - Utmel Electronic Limited
Hong Kong, China
MOSFET SINGLE N-CHANNEL
233-DMN2104L-7
MOSFET SINGLE N-CHANNEL 233-DMN2104L-7
MOSFET SINGLE N-CHANNEL

MOSFET SINGLE N-CHANNEL

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 108727-DMN2104L-7 278-DMN2104L-7 DMN2104LDITR-ND DMN2104L-7 233-DMN2104L-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2104L-7 20V 4.3A SOT23 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET SINGLE N-CHANNEL
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 1400 milliwatts 1400 milliwatts 1400 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT-23-3 Tape & Reel (TR) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
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