DIODES Incorporated Single FETs, MOSFETs DMN2080UCB4-7

MOSFET N-CH 20V 3A X2-WLB0606-4

N-Channel 20V 3A (Ta) 710mW Surface Mount X2-WLB0606-4

MOSFET N-CH 20V 3A X2-WLB0606-4

MOSFET N-CH 20V 3A X2-WLB0606-4 Product overview: DMN2080UCB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2080UCB4-7 can be used for catalog matching and distributor lookup.

Win Source Part Number: 961761-DMN2080UCB4-7
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 710mW
Package / Case: 4-XFBGA, WLBGA
Supplier Device Package: X2-WLB0606-4
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Base Product Number: DMN2080
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V