MOSFET N-CH 20V 2.8A SOT363
N-Channel 20V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363
N-Channel 20V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363
N-Channel 20V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363
Manufacturer: Diodes Incorporated
Win Source Part Number: 101311-DMN2075UDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: DMN2075UDW
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7nC @ 4.5V
Max Input Capacitance: 594.3pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 48 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): NTJS3157NT2; Si1488DH-T1-E3; SI1488DH-T1;
Introduction Date: September 23, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
MOSFET, N-CH, 20V, 2.8A, SOT-363 ROHS COMPLIANT: YES
MOSFET N-CH 20V 2.8A SOT363
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN2075UDW-7 | DMN2075UDW-7DITR-ND | 101311-DMN2075UDW-7 | 28AK8508 | DMN2075UDW-7 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2075UDW-7 | Mosfet, N-Ch, 20V, 2.8A, Sot-363 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 20 volts | 20 volts | |||
| IDSS | 2800 milliamps |