DIODES Incorporated Single FETs, MOSFETs DMN2075UDW-7

Description
MOSFET N-CH 20V 2.8A SOT363
Request a Quote Datasheet
Description
MOSFET N-CH 20V 2.8A SOT363
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMN2075UDW-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN2075UDW-7
Single FETs, MOSFETs DMN2075UDW-7
MOSFET N-CH 20V 2.8A SOT363

MOSFET N-CH 20V 2.8A SOT363

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN2075UDW-7DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2075UDW-7DITR-ND
Single FETs, MOSFETs DMN2075UDW-7DITR-ND
N-Channel 20V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363

N-Channel 20V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363

Buy Now Datasheet
Single FETs, MOSFETs - DMN2075UDW-7DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2075UDW-7DICT-ND
Single FETs, MOSFETs DMN2075UDW-7DICT-ND
N-Channel 20V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363

N-Channel 20V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363

Buy Now Datasheet
Single FETs, MOSFETs - DMN2075UDW-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2075UDW-7DIDKR-ND
Single FETs, MOSFETs DMN2075UDW-7DIDKR-ND
N-Channel 20V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363

N-Channel 20V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2075UDW-7 - 101311-DMN2075UDW-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2075UDW-7
101311-DMN2075UDW-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2075UDW-7 101311-DMN2075UDW-7
Manufacturer: Diodes Incorporated Win Source Part Number: 101311-DMN2075UDW-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: DMN2075UDW Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 7nC @ 4.5V Max Input Capacitance: 594.3pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 48 mOhm @ 3A, 4.5V Alternative Parts (Cross-Reference): NTJS3157NT2; Si1488DH-T1-E3; SI1488DH-T1; Introduction Date: September 23, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 101311-DMN2075UDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: DMN2075UDW
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7nC @ 4.5V
Max Input Capacitance: 594.3pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 48 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): NTJS3157NT2; Si1488DH-T1-E3; SI1488DH-T1;
Introduction Date: September 23, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Mosfet, N-Ch, 20V, 2.8A, Sot-363 Rohs Compliant Diodes Inc. - 28AK8508 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 2.8A, Sot-363 Rohs Compliant Diodes Inc.
28AK8508
Mosfet, N-Ch, 20V, 2.8A, Sot-363 Rohs Compliant Diodes Inc. 28AK8508
MOSFET, N-CH, 20V, 2.8A, SOT-363 ROHS COMPLIANT: YES

MOSFET, N-CH, 20V, 2.8A, SOT-363 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2075UDW-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2075UDW-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2075UDW-7
MOSFET N-CH 20V 2.8A SOT363

MOSFET N-CH 20V 2.8A SOT363

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMN2075UDW-7 DMN2075UDW-7DITR-ND 101311-DMN2075UDW-7 28AK8508 DMN2075UDW-7
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2075UDW-7 Mosfet, N-Ch, 20V, 2.8A, Sot-363 Rohs Compliant Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 2800 milliamps
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