DIODES Incorporated 20V 3.1A MOSFET Transistor DMN2065UWQ-7

MOSFET N-CH 20V 3.1A SOT323 Product overview: DMN2065UWQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2065UWQ-7 can be used for catalog matching and distributor lookup.

N-Channel 20V 3.1A (Ta) 700mW (Ta) Surface Mount SOT-323

N-Channel 20V 3.1A (Ta) 700mW (Ta) Surface Mount SOT-323

N-Channel 20V 3.1A (Ta) 700mW (Ta) Surface Mount SOT-323

Manufacturer: Diodes Incorporated
Win Source Part Number: 803559-DMN2065UWQ-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: SC-70, SOT-323
Power Dissipation (Maximum): 700mW
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 56mOhm at 2A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 5.4nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 400pF at 10V
Current - Continuous Drain (Id) at 25°C: 3.1A
Vgs(th) (Maximum) at Id: 1V at 250μA
Maximum Vgs: ±12V