MOSFET N-CH 20V 4.6A SOT23-3 Product overview: DMN2058U-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.6A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.6A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2058U-7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 4.6A SOT23-3
MOSFET N-CH 20V 4.6A SOT23-3
N-Channel 20V 4.6A (Ta) 1.13W Surface Mount SOT-23-3
MOSFET N-CH 20V 4.6A SOT23-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 803016-DMN2058U-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 1.13W
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
Rds On (Maximum) at Id, Vgs: 35mOhm at 6A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 7.7nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 281pF at 10V
Current - Continuous Drain (Id) at 25°C: 4.6A
Vgs(th) (Maximum) at Id: 1.2V at 250μA
Maximum Vgs: ±12V
MOSFET, AEC-Q101, N-CH, 20V, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:600mV; Power RoHS Compliant: Yes
MOSFET N-CH 20V 4.6A SOT23-3
20V 4.6A 35mΩ@10V,6A 1.13W 1.2V@250uA N Channel SOT-23 MOSFETs ROHS
MOSFET N-CH 20V 4.6A SOT23-3
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMN2058U-7 | DMN2058U-7 | 31-DMN2058U-7DKR-ND | 803016-DMN2058U-7 | 12AC0704 | 233-DMN2058U-7 | DMN2058U-7 | DMN2058U-7 | DMN2058U-7 |
| Product Name | 20V 4.6A SOT23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - DMN2058U-7 | Mosfet, Aec-Q101, N-Ch, 20V, Sot-23; Transistor Polarity Diodes Inc. | MOSFET N-CH 20V 4.6A SOT23-3 | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||||
| PD | 1.13 milliwatts | 1130 milliwatts | 1130 milliwatts | 1130 milliwatts | 1130 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
