Win Source Part Number: 1357371-DMN2055U-7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Product Number: DMN2055
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Power Dissipation (Max): 800mW (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
MOSFET N-CH 20V 4.8A SOT23 T&R 3
MOSFET N-CH 20V 4.8A SOT23 T&R 3
N-Channel 20V 4.8A (Ta) 800mW (Ta) Surface Mount SOT-23-3
MOSFET N-CH 20V 4.8A SOT23 T&R 3
MOSFET N-CH 20V 4.8A SOT23 T&R 3 Product overview: DMN2055U-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.8A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.8A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2055U-7 can be used for catalog matching and distributor lookup.
MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1357371-DMN2055U-7 | 31-DMN2055U-7DKR-ND | DMN2055U-7 | 278-DMN2055U-7 | DMN2055U-7 | DMN2055U-7 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | 20V 4.8A SOT23 MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 800 milliwatts | 800 milliwatts | 1.2 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |