DIODES Incorporated Single FETs, MOSFETs DMN2055U-7

MOSFET N-CH 20V 4.8A SOT23 T&R 3

MOSFET N-CH 20V 4.8A SOT23 T&R 3 Product overview: DMN2055U-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.8A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.8A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2055U-7 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 4.8A SOT23 T&R 3

MOSFET N-CH 20V 4.8A SOT23 T&R 3

N-Channel 20V 4.8A (Ta) 800mW (Ta) Surface Mount SOT-23-3

Win Source Part Number: 1357371-DMN2055U-7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Product Number: DMN2055
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Power Dissipation (Max): 800mW (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99