The DMN2053UVTQ is a dual N-channel enhancement mode MOSFET in a TSOT26 package, designed for high-efficiency power management applications such as DC-DC converters and backlighting. It has a drain-source voltage rating of 20V, continuous drain currents of 4.6A at 4.5V gate-source bias and 4.2A at 2.5V, and on-resistance of 35mΩ at 4.5V and 43mΩ at 2.5V. The device supports a pulsed drain current of 22A, has a thermal resistance of 108°C/W when mounted on a 1-inch square copper plate, and operates from -55°C to +150°C. It is AEC-Q101 qualified, PPAP capable, manufactured in IATF 16949 certified facilities, and meets RoHS, UL 94 V-0, and IEC 60286-3 standards. Moisture sensitivity is Level 1 per J-STD-020. The -13 suffix indicates 10,000 units per tape and reel packaging, identical in electrical and mechanical specs to the -7 variant.
MOSFET 2N-CH 20V 4.6A TSOT26
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMN2053UVTQ-13TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 |
