MOSFET 2N-CH 20V 3.3A 6UDFN Product overview: DMN2050LFDB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2050LFDB-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 3.3A 730mW Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 20V 3.3A 730mW Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 20V 3.3A 730mW Surface Mount U-DFN2020-6 (Type B)
MOSFET 2N-CH 20V 3.3A 6UDFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033728-DMN2050LFDB-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type B)
Maximum Power Dissipation: 730mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 389pF @ 10V
Maximum Rds On at Id,Vgs: 45 mOhm @ 5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Application Field: Used in Medical, Imaging, Video & Vision, Automation & Process Control, Portable Devices, Sensing & Instrumentation
MOSFET 2N-CH 20V 3.3A 6UDFN
MOSFET DUAL N-CH EH MODE 20V 45mOhm 4.5A
MOSFET, DUAL, N-CH, 20V, 4.5A ROHS COMPLIANT: YES
20V 3.3A 45mΩ@4.5V,5A 730mW 1V@250uA 2 N-Channel UDFN2020-6 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-DMN2050LFDB-7 | 31-DMN2050LFDB-7TR-ND | DMN2050LFDB-7 | 1033728-DMN2050LFDB-7 | DMN2050LFDB-7 | DMN2050LFDB-7 | 28AK8503 | DMN2050LFDB-7 |
| Product Name | 20V 3.3A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2050LFDB-7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual, N-Ch, 20V, 4.5A Rohs Compliant Diodes Inc. | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | ||||
| PD | 1.42 milliwatts | 730 milliwatts | 730 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
