DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2028USS-13 DMN2028USS-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 099263-DMN2028USS-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Family Name: DMN2028USS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.3A (Ta) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 11.6nC @ 4.5V Max Input Capacitance: 1000pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 20 mOhm @ 9.4A, 4.5V Alternative Parts (Cross-Reference): TSM7401CS RL; IRF7401; TSM7401CS; Introduction Date: September 10, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 099263-DMN2028USS-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Family Name: DMN2028USS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.3A (Ta) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 11.6nC @ 4.5V Max Input Capacitance: 1000pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 20 mOhm @ 9.4A, 4.5V Alternative Parts (Cross-Reference): TSM7401CS RL; IRF7401; TSM7401CS; Introduction Date: September 10, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2028USS-13 - 099263-DMN2028USS-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2028USS-13
099263-DMN2028USS-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2028USS-13 099263-DMN2028USS-13
Manufacturer: Diodes Incorporated Win Source Part Number: 099263-DMN2028USS-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Family Name: DMN2028USS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.3A (Ta) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 11.6nC @ 4.5V Max Input Capacitance: 1000pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 20 mOhm @ 9.4A, 4.5V Alternative Parts (Cross-Reference): TSM7401CS RL; IRF7401; TSM7401CS; Introduction Date: September 10, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 099263-DMN2028USS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Family Name: DMN2028USS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.3A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 11.6nC @ 4.5V
Max Input Capacitance: 1000pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 20 mOhm @ 9.4A, 4.5V
Alternative Parts (Cross-Reference): TSM7401CS RL; IRF7401; TSM7401CS;
Introduction Date: September 10, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - DMN2028USS-13DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2028USS-13DIDKR-ND
Single FETs, MOSFETs DMN2028USS-13DIDKR-ND
N-Channel 20V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

N-Channel 20V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - DMN2028USS-13DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2028USS-13DICT-ND
Single FETs, MOSFETs DMN2028USS-13DICT-ND
N-Channel 20V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

N-Channel 20V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - DMN2028USS-13DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2028USS-13DITR-ND
Single FETs, MOSFETs DMN2028USS-13DITR-ND
N-Channel 20V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

N-Channel 20V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - DMN2028USS-13 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN2028USS-13
Single FETs, MOSFETs DMN2028USS-13
MOSFET N-CH 20V 7.3A 8SO

MOSFET N-CH 20V 7.3A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2028USS-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2028USS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2028USS-13
MOSFET N-CH 20V 7.3A 8SO

MOSFET N-CH 20V 7.3A 8SO

Supplier's Site
Mosfet,n Channel,20V,7.3A,so8; Channel Type Diodes Inc. - 27T2699 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Channel,20V,7.3A,so8; Channel Type Diodes Inc.
27T2699
Mosfet,n Channel,20V,7.3A,so8; Channel Type Diodes Inc. 27T2699
MOSFET,N CHANNEL,20V,7.3A,SO8 ; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET,N CHANNEL,20V,7.3A,SO8; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A

MOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 099263-DMN2028USS-13 DMN2028USS-13DIDKR-ND DMN2028USS-13 DMN2028USS-13 27T2699 DMN2028USS-13
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2028USS-13 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet,n Channel,20V,7.3A,so8; Channel Type Diodes Inc. MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 1560 milliwatts 1560 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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