DIODES Incorporated Single FETs, MOSFETs DMN2027LK3-13

Description
N-Channel 20V 11.6A (Ta) 2.14W (Ta) Surface Mount TO-252-3
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Description
N-Channel 20V 11.6A (Ta) 2.14W (Ta) Surface Mount TO-252-3
Request a Quote Datasheet

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Single FETs, MOSFETs - DMN2027LK3-13DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2027LK3-13DITR-ND
Single FETs, MOSFETs DMN2027LK3-13DITR-ND
N-Channel 20V 11.6A (Ta) 2.14W (Ta) Surface Mount TO-252-3

N-Channel 20V 11.6A (Ta) 2.14W (Ta) Surface Mount TO-252-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2027LK3-13 - 116755-DMN2027LK3-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2027LK3-13
116755-DMN2027LK3-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2027LK3-13 116755-DMN2027LK3-13
Manufacturer: Diodes Incorporated Win Source Part Number: 116755-DMN2027LK3-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.14W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 11.6A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 9.1nC @ 4.5V Max Input Capacitance: 857pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 21 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 116755-DMN2027LK3-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.14W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 11.6A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 9.1nC @ 4.5V
Max Input Capacitance: 857pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 21 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2027LK3-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2027LK3-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2027LK3-13
MOSFET N-CH 20V 11.6A TO252-3

MOSFET N-CH 20V 11.6A TO252-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMN2027LK3-13DITR-ND 116755-DMN2027LK3-13 DMN2027LK3-13
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2027LK3-13 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 20 volts
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