DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs DMN2026UVT-13

Description
Win Source Part Number: 1378261-DMN2026UVT-1 3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Reel Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) Mfr: Diodes Incorporated Product Status: Active Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6 Base Product Number: DMN2026 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V Power Dissipation (Max): 1.15W (Ta) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Description
Win Source Part Number: 1378261-DMN2026UVT-1 3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Reel Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) Mfr: Diodes Incorporated Product Status: Active Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6 Base Product Number: DMN2026 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V Power Dissipation (Max): 1.15W (Ta) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1378261-DMN2026UVT-13 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1378261-DMN2026UVT-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1378261-DMN2026UVT-13
Win Source Part Number: 1378261-DMN2026UVT-1 3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Reel Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) Mfr: Diodes Incorporated Product Status: Active Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6 Base Product Number: DMN2026 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V Power Dissipation (Max): 1.15W (Ta) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1378261-DMN2026UVT-13
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Product Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6
Base Product Number: DMN2026
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
Power Dissipation (Max): 1.15W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
Single FETs, MOSFETs - DMN2026UVT-13DI-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2026UVT-13DI-ND
Single FETs, MOSFETs DMN2026UVT-13DI-ND
N-Channel 20V 6.2A (Tc) 1.15W (Ta) Surface Mount TSOT-23-6

N-Channel 20V 6.2A (Tc) 1.15W (Ta) Surface Mount TSOT-23-6

Buy Now Datasheet
Singapore
20V 6.2A MOSFET Transistor
278-DMN2026UVT-13
20V 6.2A MOSFET Transistor 278-DMN2026UVT-13
MOSFET N-CH 20V 6.2A TSOT-26 Product overview: DMN2026UVT-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2026UVT-13 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 6.2A TSOT-26 Product overview: DMN2026UVT-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2026UVT-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2026UVT-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2026UVT-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2026UVT-13
MOSFET N-CH 20V 6.2A TSOT-26

MOSFET N-CH 20V 6.2A TSOT-26

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode FET 20Vdss 10Vgss 20A

MOSFET N-Ch Enh Mode FET 20Vdss 10Vgss 20A

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Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1378261-DMN2026UVT-13 DMN2026UVT-13DI-ND 278-DMN2026UVT-13 DMN2026UVT-13 DMN2026UVT-13
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs 20V 6.2A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
PD 1150 milliwatts 1150 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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