DIODES Incorporated Single FETs, MOSFETs DMN2026UVT-13

N-Channel 20V 6.2A (Tc) 1.15W (Ta) Surface Mount TSOT-23-6

MOSFET N-CH 20V 6.2A TSOT-26 Product overview: DMN2026UVT-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2026UVT-13 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1378261-DMN2026UVT-13
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Product Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6
Base Product Number: DMN2026
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
Power Dissipation (Max): 1.15W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99