DIODES Incorporated FET, MOSFET Arrays DMN2025UFDB-7

Description
MOSFET BVDSS: 8V-24V U-DFN2020-6
Request a Quote Datasheet
Description
MOSFET BVDSS: 8V-24V U-DFN2020-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - DMN2025UFDB-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN2025UFDB-7
FET, MOSFET Arrays DMN2025UFDB-7
MOSFET BVDSS: 8V-24V U-DFN2020-6

MOSFET BVDSS: 8V-24V U-DFN2020-6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays - 1376902-DMN2025UFDB-7 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
1376902-DMN2025UFDB-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays 1376902-DMN2025UFDB-7
Win Source Part Number: 1376902-DMN2025UFDB- 7 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays Package: Tape & Reel Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 41 pct. MSL Level: 1 (Unlimited) Mfr: Diodes Incorporated Product Status: Active Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B) Base Product Number: DMN2025 Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V Mounting Type: Surface Mount HTSUS: 8541.21.0095 REACH Status: REACH Unaffected ECCN: EAR99 Power - Max: 700mW (Ta) Configuration: 2 N-Channel (Dual)

Win Source Part Number: 1376902-DMN2025UFDB-7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 41 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Product Status: Active
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)
Base Product Number: DMN2025
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 700mW (Ta)
Configuration: 2 N-Channel (Dual)

Buy Now Datasheet
FET, MOSFET Arrays - DMN2025UFDB-7-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN2025UFDB-7-ND
FET, MOSFET Arrays DMN2025UFDB-7-ND
Mosfet Array 2 N-Channel (Dual) 20V 6A (Ta) 700mW (Ta) Surface Mount U-DFN2020-6 (Type B)

Mosfet Array 2 N-Channel (Dual) 20V 6A (Ta) 700mW (Ta) Surface Mount U-DFN2020-6 (Type B)

Buy Now Datasheet
Singapore
20V 6A MOSFET Transistor
289-DMN2025UFDB-7
20V 6A MOSFET Transistor 289-DMN2025UFDB-7
MOSFET 2N-CH 20V 6A 6UDFN Product overview: DMN2025UFDB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2025UFDB-7 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 20V 6A 6UDFN Product overview: DMN2025UFDB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2025UFDB-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K

MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K

Buy Now Datasheet
Integrated Circuits (ICs) - Transistors - MOSFETs - DMN2025UFDB-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
DMN2025UFDB-7
Integrated Circuits (ICs) - Transistors - MOSFETs DMN2025UFDB-7
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site
Mosfet, N-Ch, 20V, 6A, U-Dfn2020 Rohs Compliant Diodes Inc. - 36AJ3582 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 6A, U-Dfn2020 Rohs Compliant Diodes Inc.
36AJ3582
Mosfet, N-Ch, 20V, 6A, U-Dfn2020 Rohs Compliant Diodes Inc. 36AJ3582
MOSFET, N-CH, 20V, 6A, U-DFN2020 ROHS COMPLIANT: YES

MOSFET, N-CH, 20V, 6A, U-DFN2020 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number DMN2025UFDB-7 1376902-DMN2025UFDB-7 DMN2025UFDB-7-ND 289-DMN2025UFDB-7 DMN2025UFDB-7 DMN2025UFDB-7 36AJ3582
Product Name FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays FET, MOSFET Arrays 20V 6A MOSFET Transistor MOSFET Integrated Circuits (ICs) - Transistors - MOSFETs Mosfet, N-Ch, 20V, 6A, U-Dfn2020 Rohs Compliant Diodes Inc.
Polarity N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 6000 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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