Mosfet Array 2 N-Channel (Dual) 20V 6A (Ta) 700mW (Ta) Surface Mount U-DFN2020-6 (Type B)
Win Source Part Number: 1376902-DMN2025UFDB-
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 41 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Product Status: Active
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)
Base Product Number: DMN2025
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 700mW (Ta)
Configuration: 2 N-Channel (Dual)
MOSFET BVDSS: 8V-24V U-DFN2020-6
MOSFET 2N-CH 20V 6A 6UDFN Product overview: DMN2025UFDB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2025UFDB-7 can be used for catalog matching and distributor lookup.
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K
MOSFET, N-CH, 20V, 6A, U-DFN2020 ROHS COMPLIANT: YES
Integrated Circuits (ICs) - Transistors - MOSFETs
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN2025UFDB-7-ND | 1376902-DMN2025UFDB-7 | DMN2025UFDB-7 | 289-DMN2025UFDB-7 | DMN2025UFDB-7 | 36AJ3582 | DMN2025UFDB-7 |
| Product Name | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | FET, MOSFET Arrays | 20V 6A MOSFET Transistor | MOSFET | Mosfet, N-Ch, 20V, 6A, U-Dfn2020 Rohs Compliant Diodes Inc. | Integrated Circuits (ICs) - Transistors - MOSFETs |
| Package Type | 6-UDFN Exposed Pad | SOT3 | 6-UDFN Exposed Pad | Tape & Reel (TR) | TO-3 | ||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts |
