MOSFET BVDSS: 8V~24V SOT23 T&R 3
Win Source Part Number: 1376921-DMN2024UQ-7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Product Number: DMN2024
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
Power Dissipation (Max): 800mW
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
N-Channel 20V 6.8A (Ta) 800mW Surface Mount SOT-23-3
N-Channel 20V 6.8A (Ta) 800mW Surface Mount SOT-23-3
N-Channel 20V 6.8A (Ta) 800mW Surface Mount SOT-23-3
MOSFET, N-CH, 20V, 6.8A, SOT-23 ROHS COMPLIANT: YES
MOSFET BVDSS: 8V~24V SOT23 T&R 3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN2024UQ-7 | 1376921-DMN2024UQ-7 | 31-DMN2024UQ-7CT-ND | 12AJ7106 | DMN2024UQ-7 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 6.8A, Sot-23 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 20 volts | ||||
| IDSS | 6800 milliamps | ||||
| PD | 800 milliwatts | 800 milliwatts |