MOSFET 2N-CH X1-WLB1818-4 Product overview: DMN2023UCB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2023UCB4-7 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH X1-WLB1818-4
Manufacturer: Diodes Incorporated
Win Source Part Number: 868949-DMN2023UCB4-7
Series: Automotive, AEC-Q101
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) Common Drain 24V 6A (Ta) 1.45W Surface Mount
Package: Reel - TR
Package: 4-XFBGA, WLBGA
Mounting: Surface Mount
Family Name: DMN2023
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 31 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMN2023UCB4-7DITR, DMN2023UCB4-7DIDKR, DMN2023UCB4-7DICT
Mosfet Array 2 N-Channel (Dual) Common Drain 24V 6A (Ta) 1.45W Surface Mount X1-WLB1818-4
MOSFET 2N-CH 24V 6A X1-WLB1818-4
MOSFET 2N-CH 24V 6A X1-WLB1818-4
MOSFET 2N-CH 24V 6A X1-WLB1818-4
Mosfet Array 2 N-Channel (Dual) Common Drain 24V 6A (Ta) 1.45W Surface Mount X1-WLB1818-4
MOSFET N-Ch 24Vds 12Vgs 6.0A Enh FET 2564pF
MOSFET 2N-CH X1-WLB1818-4
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-DMN2023UCB4-7 | DMN2023UCB4-7 | 868949-DMN2023UCB4-7 | DMN2023UCB4-7DICT-ND | DMN2023UCB4-7 | DMN2023UCB4-7 |
| Product Name | MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2023UCB4-7 | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) Common Drain | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 24 volts | 24 volts | ||||
| PD | 1.45 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
