DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2022UNS-7 DMN2022UNS-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033722-DMN2022UNS-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI3333-8
Maximum Power Dissipation: 1.2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10.7A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 20.3nC @ 4.5V
Max Input Capacitance: 1870pF @ 10V
Maximum Rds On at Id,Vgs: 10.8 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 20V 10.7A PWRDI3333 Product overview: DMN2022UNS-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2022UNS-7 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 10.7A (Ta) 1.2W Surface Mount PowerDI3333-8

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 10.7A (Ta) 1.2W Surface Mount PowerDI3333-8

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 10.7A (Ta) 1.2W Surface Mount PowerDI3333-8