Mosfet Array 2 N-Channel (Dual) Common Drain 20V 10.7A (Ta) 1.2W Surface Mount PowerDI3333-8
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 10.7A (Ta) 1.2W Surface Mount PowerDI3333-8
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 10.7A (Ta) 1.2W Surface Mount PowerDI3333-8
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033722-DMN2022UNS-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI3333-8
Maximum Power Dissipation: 1.2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10.7A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 20.3nC @ 4.5V
Max Input Capacitance: 1870pF @ 10V
Maximum Rds On at Id,Vgs: 10.8 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET Dual N-Ch Enh FET 20V 10Vgss 1.2W
MOSFET 2N-CH 20V 10.7A PWRDI3333
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN2022UNS-7DITR-ND | 1033722-DMN2022UNS-7 | DMN2022UNS-7 | DMN2022UNS-7 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2022UNS-7 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 8-PowerVDFN | SOT3; PowerDI3333-8 | ||
| Polarity | N-Channel | |||
| V(BR)DSS | 20 volts |
