DIODES Incorporated Single FETs, MOSFETs DMN2022UFDF-13

N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)

Win Source Part Number: 1120577-DMN2022UFDF-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 10,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMN2022UFDF13;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Base Product Number: DMN2022
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V