DIODES Incorporated Single FETs, MOSFETs DMN2022UFDF-13

Description
N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)
Request a Quote Datasheet
Description
N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMN2022UFDF-13-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2022UFDF-13-ND
Single FETs, MOSFETs DMN2022UFDF-13-ND
N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)

N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1120577-DMN2022UFDF-13 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1120577-DMN2022UFDF-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1120577-DMN2022UFDF-13
Win Source Part Number: 1120577-DMN2022UFDF- 13 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 10,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 660mW (Ta) Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type F) Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): DMN2022UFDF13; ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Diodes Incorporated Base Product Number: DMN2022 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V

Win Source Part Number: 1120577-DMN2022UFDF-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 10,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMN2022UFDF13;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Base Product Number: DMN2022
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V

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Sheung Wan, Hong Kong
MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W

MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W

Buy Now Datasheet
MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W - 233-DMN2022UFDF-13 - Utmel Electronic Limited
Hong Kong, China
MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W
233-DMN2022UFDF-13
MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W 233-DMN2022UFDF-13
MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W

MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2022UFDF-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2022UFDF-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2022UFDF-13
MOSFET N-CH 20V 7.9A 6UDFN

MOSFET N-CH 20V 7.9A 6UDFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMN2022UFDF-13-ND 1120577-DMN2022UFDF-13 DMN2022UFDF-13 233-DMN2022UFDF-13 DMN2022UFDF-13
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type 6-UDFN Exposed Pad SOT3 6-UDFN Exposed Pad
PD 660 milliwatts 660 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Transistor Technology / Material SILICON
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