MOSFET N-CH 20V 6.9A SC59-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 084231-DMN2020LSN-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 610mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-59-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.9A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 11.6nC @ 4.5V
Max Input Capacitance: 1149pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 20 mOhm @ 9.4A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
N-Channel 20V 6.9A (Ta) 610mW (Ta) Surface Mount SC-59-3
N-Channel 20V 6.9A (Ta) 610mW (Ta) Surface Mount SC-59-3
N-Channel 20V 6.9A (Ta) 610mW (Ta) Surface Mount SC-59-3
MOSFET N-CH 20V 6.9A SC59-3
MOSFET, N-CH, 20V, SC-59-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN2020LSN-7 | 084231-DMN2020LSN-7 | DMN2020LSN-7DIDKR-ND | DMN2020LSN-7 | 82Y6570 | DMN2020LSN-7 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2020LSN-7 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, Sc-59-3; Transistor Polarity Diodes Inc. | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 6900 milliamps | 6900 milliamps | ||||
| PD | 610 milliwatts | 610 milliwatts |
