DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2020LSN-7 DMN2020LSN-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 084231-DMN2020LSN-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 610mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-59-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.9A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 11.6nC @ 4.5V Max Input Capacitance: 1149pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 20 mOhm @ 9.4A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 084231-DMN2020LSN-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 610mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-59-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.9A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 11.6nC @ 4.5V Max Input Capacitance: 1149pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 20 mOhm @ 9.4A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2020LSN-7 - 084231-DMN2020LSN-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2020LSN-7
084231-DMN2020LSN-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2020LSN-7 084231-DMN2020LSN-7
Manufacturer: Diodes Incorporated Win Source Part Number: 084231-DMN2020LSN-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 610mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-59-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.9A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 11.6nC @ 4.5V Max Input Capacitance: 1149pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 20 mOhm @ 9.4A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 084231-DMN2020LSN-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 610mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-59-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.9A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 11.6nC @ 4.5V
Max Input Capacitance: 1149pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 20 mOhm @ 9.4A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
20V 6.9A MOSFET Transistor
278-DMN2020LSN-7
20V 6.9A MOSFET Transistor 278-DMN2020LSN-7
MOSFET N-CH 20V 6.9A SC59-3 Product overview: DMN2020LSN-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2020LSN-7 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 6.9A SC59-3 Product overview: DMN2020LSN-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2020LSN-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN2020LSN-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN2020LSN-7
Single FETs, MOSFETs DMN2020LSN-7
MOSFET N-CH 20V 6.9A SC59-3

MOSFET N-CH 20V 6.9A SC59-3

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN2020LSN-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2020LSN-7DIDKR-ND
Single FETs, MOSFETs DMN2020LSN-7DIDKR-ND
N-Channel 20V 6.9A (Ta) 610mW (Ta) Surface Mount SC-59-3

N-Channel 20V 6.9A (Ta) 610mW (Ta) Surface Mount SC-59-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN2020LSN-7DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2020LSN-7DITR-ND
Single FETs, MOSFETs DMN2020LSN-7DITR-ND
N-Channel 20V 6.9A (Ta) 610mW (Ta) Surface Mount SC-59-3

N-Channel 20V 6.9A (Ta) 610mW (Ta) Surface Mount SC-59-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN2020LSN-7DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2020LSN-7DICT-ND
Single FETs, MOSFETs DMN2020LSN-7DICT-ND
N-Channel 20V 6.9A (Ta) 610mW (Ta) Surface Mount SC-59-3

N-Channel 20V 6.9A (Ta) 610mW (Ta) Surface Mount SC-59-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2020LSN-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2020LSN-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2020LSN-7
MOSFET N-CH 20V 6.9A SC59-3

MOSFET N-CH 20V 6.9A SC59-3

Supplier's Site
Mosfet, N-Ch, 20V, Sc-59-3; Transistor Polarity Diodes Inc. - 82Y6570 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, Sc-59-3; Transistor Polarity Diodes Inc.
82Y6570
Mosfet, N-Ch, 20V, Sc-59-3; Transistor Polarity Diodes Inc. 82Y6570
MOSFET, N-CH, 20V, SC-59-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 20V, SC-59-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET,N-CHANNEL

MOSFET MOSFET,N-CHANNEL

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 084231-DMN2020LSN-7 278-DMN2020LSN-7 DMN2020LSN-7 DMN2020LSN-7DIDKR-ND DMN2020LSN-7 82Y6570 DMN2020LSN-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2020LSN-7 20V 6.9A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 20V, Sc-59-3; Transistor Polarity Diodes Inc. MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 610 milliwatts 610 milliwatts 610 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SC-59-3 Tape & Reel (TR) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3
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