DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2019UTS-13 DMN2019UTS-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1168120-DMN2019UTS-1 3 Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-TSSOP (0.173", 4.40mm Width) Mounting: SMD FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 5.4A Power - Max: 780mW Family Name: DMN2019UTS Categories: Discrete Semiconductor Products Manufacturer Homepage: www.diodes.com Manufacturer Package: 8-TSSOP Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 950mV @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 143pF @ 10V Rds On (Maximum) @ Id, Vgs: 18.5 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): UPA1870BGR-9JG-E2-AT ; UPA1870BGR-9JG-E2-AT ; UPA1870BGR-9JG-E1; Introduction Date: October 07, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1168120-DMN2019UTS-1 3 Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-TSSOP (0.173", 4.40mm Width) Mounting: SMD FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 5.4A Power - Max: 780mW Family Name: DMN2019UTS Categories: Discrete Semiconductor Products Manufacturer Homepage: www.diodes.com Manufacturer Package: 8-TSSOP Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 950mV @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 143pF @ 10V Rds On (Maximum) @ Id, Vgs: 18.5 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): UPA1870BGR-9JG-E2-AT ; UPA1870BGR-9JG-E2-AT ; UPA1870BGR-9JG-E1; Introduction Date: October 07, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2019UTS-13 - 1168120-DMN2019UTS-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2019UTS-13
1168120-DMN2019UTS-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2019UTS-13 1168120-DMN2019UTS-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1168120-DMN2019UTS-1 3 Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-TSSOP (0.173", 4.40mm Width) Mounting: SMD FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 5.4A Power - Max: 780mW Family Name: DMN2019UTS Categories: Discrete Semiconductor Products Manufacturer Homepage: www.diodes.com Manufacturer Package: 8-TSSOP Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 950mV @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 143pF @ 10V Rds On (Maximum) @ Id, Vgs: 18.5 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): UPA1870BGR-9JG-E2-AT ; UPA1870BGR-9JG-E2-AT ; UPA1870BGR-9JG-E1; Introduction Date: October 07, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 1168120-DMN2019UTS-13
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-TSSOP (0.173", 4.40mm Width)
Mounting: SMD
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 5.4A
Power - Max: 780mW
Family Name: DMN2019UTS
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.diodes.com
Manufacturer Package: 8-TSSOP
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 950mV @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 143pF @ 10V
Rds On (Maximum) @ Id, Vgs: 18.5 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): UPA1870BGR-9JG-E2-AT; UPA1870BGR-9JG-E2-AT; UPA1870BGR-9JG-E1;
Introduction Date: October 07, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - DMN2019UTS-13DICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN2019UTS-13DICT-ND
FET, MOSFET Arrays DMN2019UTS-13DICT-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.4A 780mW Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.4A 780mW Surface Mount 8-TSSOP

Buy Now Datasheet
FET, MOSFET Arrays - DMN2019UTS-13DITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN2019UTS-13DITR-ND
FET, MOSFET Arrays DMN2019UTS-13DITR-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.4A 780mW Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.4A 780mW Surface Mount 8-TSSOP

Buy Now Datasheet
FET, MOSFET Arrays - DMN2019UTS-13DIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN2019UTS-13DIDKR-ND
FET, MOSFET Arrays DMN2019UTS-13DIDKR-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.4A 780mW Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.4A 780mW Surface Mount 8-TSSOP

Buy Now Datasheet
Singapore
20V 5.4A MOSFET Transistor
289-DMN2019UTS-13
20V 5.4A MOSFET Transistor 289-DMN2019UTS-13
MOSFET 2N-CH 20V 5.4A 8TSSOP Product overview: DMN2019UTS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2019UTS-13 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 20V 5.4A 8TSSOP Product overview: DMN2019UTS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2019UTS-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET BVDSS: 8V-24V 24V TSSOP-8 T&R 2.5K

MOSFET MOSFET BVDSS: 8V-24V 24V TSSOP-8 T&R 2.5K

Buy Now Datasheet
Mosfet, Dual, N-Ch, 20V, 5.4A Rohs Compliant Diodes Inc. - 28AK8494 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N-Ch, 20V, 5.4A Rohs Compliant Diodes Inc.
28AK8494
Mosfet, Dual, N-Ch, 20V, 5.4A Rohs Compliant Diodes Inc. 28AK8494
MOSFET, DUAL, N-CH, 20V, 5.4A ROHS COMPLIANT: YES

MOSFET, DUAL, N-CH, 20V, 5.4A ROHS COMPLIANT: YES

Supplier's Site
FET, MOSFET Arrays - DMN2019UTS-13 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN2019UTS-13
FET, MOSFET Arrays DMN2019UTS-13
MOSFET 2N-CH 20V 5.4A TSSOP-8

MOSFET 2N-CH 20V 5.4A TSSOP-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2019UTS-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2019UTS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2019UTS-13
MOSFET 2N-CH 20V 5.4A 8TSSOP

MOSFET 2N-CH 20V 5.4A 8TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1168120-DMN2019UTS-13 DMN2019UTS-13DICT-ND 289-DMN2019UTS-13 DMN2019UTS-13 28AK8494 DMN2019UTS-13 DMN2019UTS-13
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2019UTS-13 FET, MOSFET Arrays 20V 5.4A MOSFET Transistor MOSFET Mosfet, Dual, N-Ch, 20V, 5.4A Rohs Compliant Diodes Inc. FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual) Common Drain
Package Type SOT3 "8-TSSOP (0.173"", 4.40mm Width)" Tape & Reel (TR) TO-3 8-TSSOP (0.173", 4.40mm Width)
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts 20 volts
PD 780 milliwatts
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