DIODES Incorporated FET, MOSFET Arrays DMN2016UTS-13

Description
MOSFET 2N-CH 20V 8.58A 8-TSSOP
Request a Quote Datasheet
Description
MOSFET 2N-CH 20V 8.58A 8-TSSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - DMN2016UTS-13 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN2016UTS-13
FET, MOSFET Arrays DMN2016UTS-13
MOSFET 2N-CH 20V 8.58A 8-TSSOP

MOSFET 2N-CH 20V 8.58A 8-TSSOP

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016UTS-13 - 1033719-DMN2016UTS-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016UTS-13
1033719-DMN2016UTS-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016UTS-13 1033719-DMN2016UTS-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1033719-DMN2016UTS-1 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 880mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8.58A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 16.5nC @ 4.5V Max Input Capacitance: 1495pF @ 10V Maximum Rds On at Id,Vgs: 14.5 mOhm @ 9.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033719-DMN2016UTS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 880mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8.58A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 16.5nC @ 4.5V
Max Input Capacitance: 1495pF @ 10V
Maximum Rds On at Id,Vgs: 14.5 mOhm @ 9.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - DMN2016UTS-13DICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN2016UTS-13DICT-ND
FET, MOSFET Arrays DMN2016UTS-13DICT-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 8.58A 880mW Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 8.58A 880mW Surface Mount 8-TSSOP

Buy Now Datasheet
FET, MOSFET Arrays - DMN2016UTS-13DIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN2016UTS-13DIDKR-ND
FET, MOSFET Arrays DMN2016UTS-13DIDKR-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 8.58A 880mW Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 8.58A 880mW Surface Mount 8-TSSOP

Buy Now Datasheet
FET, MOSFET Arrays - DMN2016UTS-13DITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN2016UTS-13DITR-ND
FET, MOSFET Arrays DMN2016UTS-13DITR-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 8.58A 880mW Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 8.58A 880mW Surface Mount 8-TSSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2016UTS-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2016UTS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2016UTS-13
MOSFET 2N-CH 20V 8.58A 8TSSOP

MOSFET 2N-CH 20V 8.58A 8TSSOP

Supplier's Site
Mosfet, Dual, N-Ch, 20V, 8.58A Rohs Compliant Diodes Inc. - 28AK8493 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N-Ch, 20V, 8.58A Rohs Compliant Diodes Inc.
28AK8493
Mosfet, Dual, N-Ch, 20V, 8.58A Rohs Compliant Diodes Inc. 28AK8493
MOSFET, DUAL, N-CH, 20V, 8.58A ROHS COMPLIANT: YES

MOSFET, DUAL, N-CH, 20V, 8.58A ROHS COMPLIANT: YES

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS

MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number DMN2016UTS-13 1033719-DMN2016UTS-13 DMN2016UTS-13DICT-ND DMN2016UTS-13 28AK8493 DMN2016UTS-13
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016UTS-13 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual, N-Ch, 20V, 8.58A Rohs Compliant Diodes Inc. MOSFET
Polarity N-Channel; 2 N-Channel (Dual) Common Drain N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 8580 milliamps
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