Mosfet Array 2 N-Channel (Dual) Common Drain 20V 8.58A 880mW Surface Mount 8-TSSOP
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 8.58A 880mW Surface Mount 8-TSSOP
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 8.58A 880mW Surface Mount 8-TSSOP
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033719-DMN2016UTS-1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 880mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8.58A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 16.5nC @ 4.5V
Max Input Capacitance: 1495pF @ 10V
Maximum Rds On at Id,Vgs: 14.5 mOhm @ 9.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 8.58A 8TSSOP Product overview: DMN2016UTS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 8.58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 8.58A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2016UTS-13 can be used for catalog matching and distributor lookup.
MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS
MOSFET 2N-CH 20V 8.58A 8-TSSOP
MOSFET 2N-CH 20V 8.58A 8TSSOP
MOSFET, DUAL, N-CH, 20V, 8.58A ROHS COMPLIANT: YES
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN2016UTS-13DICT-ND | 1033719-DMN2016UTS-13 | 289-DMN2016UTS-13 | DMN2016UTS-13 | DMN2016UTS-13 | DMN2016UTS-13 | 28AK8493 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016UTS-13 | 20V 8.58A MOSFET Transistor | MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N-Ch, 20V, 8.58A Rohs Compliant Diodes Inc. |
| Package Type | "8-TSSOP (0.173"", 4.40mm Width)" | SOT3; 8-TSSOP | Tape & Reel (TR) | 8-TSSOP (0.173", 4.40mm Width) | TO-3 | ||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) Common Drain | ||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| PD | 880 milliwatts | 880 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
