DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016LHAB-7 DMN2016LHAB-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080567-DMN2016LHAB-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Family Name: DMN2016LHAB Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2030-6 Maximum Power Dissipation: 1.2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1550pF @ 10V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 4A, 4.5V Alternative Parts (Cross-Reference): Upa2465t1qe1ax; Introduction Date: March 18, 2013 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080567-DMN2016LHAB-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Family Name: DMN2016LHAB Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2030-6 Maximum Power Dissipation: 1.2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1550pF @ 10V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 4A, 4.5V Alternative Parts (Cross-Reference): Upa2465t1qe1ax; Introduction Date: March 18, 2013 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016LHAB-7 - 080567-DMN2016LHAB-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016LHAB-7
080567-DMN2016LHAB-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016LHAB-7 080567-DMN2016LHAB-7
Manufacturer: Diodes Incorporated Win Source Part Number: 080567-DMN2016LHAB-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Family Name: DMN2016LHAB Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2030-6 Maximum Power Dissipation: 1.2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1550pF @ 10V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 4A, 4.5V Alternative Parts (Cross-Reference): Upa2465t1qe1ax; Introduction Date: March 18, 2013 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 080567-DMN2016LHAB-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Family Name: DMN2016LHAB
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2030-6
Maximum Power Dissipation: 1.2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.5A
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 16nC @ 4.5V
Max Input Capacitance: 1550pF @ 10V
Maximum Rds On at Id,Vgs: 15.5 mOhm @ 4A, 4.5V
Alternative Parts (Cross-Reference): Upa2465t1qe1ax;
Introduction Date: March 18, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN2016LHAB-7CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN2016LHAB-7CT-ND
FET, MOSFET Arrays 31-DMN2016LHAB-7CT-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN2016LHAB-7DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN2016LHAB-7DKR-ND
FET, MOSFET Arrays 31-DMN2016LHAB-7DKR-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN2016LHAB-7TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN2016LHAB-7TR-ND
FET, MOSFET Arrays 31-DMN2016LHAB-7TR-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Buy Now Datasheet
Singapore
20V 7.5A MOSFET Transistor
289-DMN2016LHAB-7
20V 7.5A MOSFET Transistor 289-DMN2016LHAB-7
MOSFET 2N-CH 20V 7.5A 6UDFN Product overview: DMN2016LHAB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2016LHAB-7 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 20V 7.5A 6UDFN Product overview: DMN2016LHAB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2016LHAB-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET DUAL N-CH MOSFET 20V

MOSFET DUAL N-CH MOSFET 20V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2016LHAB-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2016LHAB-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2016LHAB-7
MOSFET 2N-CH 20V 7.5A 6UDFN

MOSFET 2N-CH 20V 7.5A 6UDFN

Supplier's Site
FET, MOSFET Arrays - DMN2016LHAB-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN2016LHAB-7
FET, MOSFET Arrays DMN2016LHAB-7
MOSFET 2N-CH 20V 7.5A 6UDFN

MOSFET 2N-CH 20V 7.5A 6UDFN

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 080567-DMN2016LHAB-7 31-DMN2016LHAB-7CT-ND 289-DMN2016LHAB-7 DMN2016LHAB-7 DMN2016LHAB-7 DMN2016LHAB-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016LHAB-7 FET, MOSFET Arrays 20V 7.5A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual) Common Drain
V(BR)DSS 20 volts 20 volts 20 volts
PD 1200 milliwatts 1.65 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; U-DFN2030-6 6-UDFN Exposed Pad Tape & Reel (TR) 6-UDFN Exposed Pad 6-UDFN Exposed Pad
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