DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016LHAB-7 DMN2016LHAB-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080567-DMN2016LHAB-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Family Name: DMN2016LHAB Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2030-6 Maximum Power Dissipation: 1.2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1550pF @ 10V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 4A, 4.5V Alternative Parts (Cross-Reference): Upa2465t1qe1ax; Introduction Date: March 18, 2013 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080567-DMN2016LHAB-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Family Name: DMN2016LHAB Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2030-6 Maximum Power Dissipation: 1.2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1550pF @ 10V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 4A, 4.5V Alternative Parts (Cross-Reference): Upa2465t1qe1ax; Introduction Date: March 18, 2013 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016LHAB-7 - 080567-DMN2016LHAB-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016LHAB-7
080567-DMN2016LHAB-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016LHAB-7 080567-DMN2016LHAB-7
Manufacturer: Diodes Incorporated Win Source Part Number: 080567-DMN2016LHAB-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Family Name: DMN2016LHAB Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2030-6 Maximum Power Dissipation: 1.2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1550pF @ 10V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 4A, 4.5V Alternative Parts (Cross-Reference): Upa2465t1qe1ax; Introduction Date: March 18, 2013 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 080567-DMN2016LHAB-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Family Name: DMN2016LHAB
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2030-6
Maximum Power Dissipation: 1.2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.5A
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 16nC @ 4.5V
Max Input Capacitance: 1550pF @ 10V
Maximum Rds On at Id,Vgs: 15.5 mOhm @ 4A, 4.5V
Alternative Parts (Cross-Reference): Upa2465t1qe1ax;
Introduction Date: March 18, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN2016LHAB-7CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN2016LHAB-7CT-ND
FET, MOSFET Arrays 31-DMN2016LHAB-7CT-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN2016LHAB-7DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN2016LHAB-7DKR-ND
FET, MOSFET Arrays 31-DMN2016LHAB-7DKR-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN2016LHAB-7TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN2016LHAB-7TR-ND
FET, MOSFET Arrays 31-DMN2016LHAB-7TR-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 (Type B)

Buy Now Datasheet
Singapore
20V 7.5A MOSFET Transistor
289-DMN2016LHAB-7
20V 7.5A MOSFET Transistor 289-DMN2016LHAB-7
MOSFET 2N-CH 20V 7.5A 6UDFN Product overview: DMN2016LHAB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2016LHAB-7 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 20V 7.5A 6UDFN Product overview: DMN2016LHAB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2016LHAB-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2016LHAB-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2016LHAB-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2016LHAB-7
MOSFET 2N-CH 20V 7.5A 6UDFN

MOSFET 2N-CH 20V 7.5A 6UDFN

Supplier's Site
FET, MOSFET Arrays - DMN2016LHAB-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN2016LHAB-7
FET, MOSFET Arrays DMN2016LHAB-7
MOSFET 2N-CH 20V 7.5A 6UDFN

MOSFET 2N-CH 20V 7.5A 6UDFN

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET DUAL N-CH MOSFET 20V

MOSFET DUAL N-CH MOSFET 20V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 080567-DMN2016LHAB-7 31-DMN2016LHAB-7CT-ND 289-DMN2016LHAB-7 DMN2016LHAB-7 DMN2016LHAB-7 DMN2016LHAB-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016LHAB-7 FET, MOSFET Arrays 20V 7.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays MOSFET
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual) Common Drain
V(BR)DSS 20 volts 20 volts 20 volts
PD 1200 milliwatts 1.65 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; U-DFN2030-6 6-UDFN Exposed Pad Tape & Reel (TR) 6-UDFN Exposed Pad 6-UDFN Exposed Pad
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