DIODES Incorporated Single FETs, MOSFETs DMN2015UFDE-7

N-Channel 20V 10.5A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)

MOSFET N-CH 20V 10.5A 6UDFN

MOSFET N-CH 20V 10.5A 6UDFN

MOSFET N-CH 20V 10.5A 6UDFN Product overview: DMN2015UFDE-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2015UFDE-7 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 014413-DMN2015UFDE-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 660mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type E)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10.5A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 45.6nC @ 10V
Max Input Capacitance: 1779pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 11.6 mOhm @ 8.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient