Manufacturer: Diodes Incorporated
Win Source Part Number: 119373-DMN2011UFX-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: V-DFN2050-4
Maximum Power Dissipation: 2.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 12.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 2248pF @ 10V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 12.2A 4VDFN Product overview: DMN2011UFX-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 12.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 12.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2011UFX-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 12.2A (Ta) 2.1W Surface Mount V-DFN2050-4
Mosfet Array 2 N-Channel (Dual) 20V 12.2A (Ta) 2.1W Surface Mount V-DFN2050-4
Mosfet Array 2 N-Channel (Dual) 20V 12.2A (Ta) 2.1W Surface Mount V-DFN2050-4
MOSFET 2N-CH 20V 12.2A DFN2050-4
MOSFET Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
MOSFET 2N-CH 20V 12.2A 4VDFN
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 119373-DMN2011UFX-7 | 289-DMN2011UFX-7 | DMN2011UFX-7DICT-ND | DMN2011UFX-7 | DMN2011UFX-7 | DMN2011UFX-7 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2011UFX-7 | 20V 12.2A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) Common Drain | |||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||
| PD | 2100 milliwatts | 2.1 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3; V-DFN2050-4 | Tape & Reel (TR) | 4-VFDFN Exposed Pad | 4-VFDFN Exposed Pad |
