The DMN2011UFDF-7 is a 20V N-channel enhancement mode MOSFET designed for high efficiency power management applications. It features a low on-resistance of 9.5m,Ѷ at a gate-source voltage (VGS) of 4.5V and a maximum continuous drain current of 11.7A at 25¬8C. The device is housed in a compact U-DFN2020-6 package, making it suitable for low-profile applications. It is ESD protected and fully compliant with RoHS standards, ensuring it is environmentally friendly. The operating temperature range is from -55¬8C to +150¬8C, allowing for versatility in various environments. This MOSFET is ideal for general-purpose interfacing switches and power management functions, making it a reliable choice for engineers looking for efficient switching solutions.
MOSFET N-CH 20V 14.2A 6UDFN
N-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)
N-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)
N-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)
Manufacturer: Diodes Incorporated
Win Source Part Number: 868943-DMN2011UFDF-7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 20 V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)
Package: 6-UDFN Exposed Pad
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMN2011
Categories: Discrete Semiconductor Products
Case / Package: U-DFN2020-6 (Type F)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 89 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 31 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMN2011UFDF-7DIDKR, DMN2011UFDF-7DITR, DMN2011UFDF-7-ND, DMN2011UFDF-7DICT
MOSFET N-CH 20V 14.2A 6UDFN
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K
MOSFET, AEC-Q101, N-CH, 20V, UDFN2020; Transistor Polarity:N Channel; Continuous Drain Current Id:11.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN2011UFDF-7 | 31-DMN2011UFDF-7DKR-ND | 868943-DMN2011UFDF-7 | DMN2011UFDF-7 | DMN2011UFDF-7 | 12AC0702 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2011UFDF-7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 20V, Udfn2020; Transistor Polarity Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | |||||
| IDSS | 14200 milliamps | 11700 milliamps | ||||
| PD | 2100 milliwatts |
