DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2011UFDF-7 DMN2011UFDF-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 868943-DMN2011UFDF-7 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 20 V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F) Package: 6-UDFN Exposed Pad Package: Reel - TR Mounting: Surface Mount Family Name: DMN2011 Categories: Discrete Semiconductor Products Case / Package: U-DFN2020-6 (Type F) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 89 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 31 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: DMN2011UFDF-7DIDKR, DMN2011UFDF-7DITR, DMN2011UFDF-7-ND, DMN2011UFDF-7DICT
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 868943-DMN2011UFDF-7 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 20 V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F) Package: 6-UDFN Exposed Pad Package: Reel - TR Mounting: Surface Mount Family Name: DMN2011 Categories: Discrete Semiconductor Products Case / Package: U-DFN2020-6 (Type F) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 89 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 31 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: DMN2011UFDF-7DIDKR, DMN2011UFDF-7DITR, DMN2011UFDF-7-ND, DMN2011UFDF-7DICT
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Datasheet
Datasheet Summary
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The DMN2011UFDF-7 is a 20V N-channel enhancement mode MOSFET designed for high efficiency power management applications. It features a low on-resistance of 9.5m,Ѷ at a gate-source voltage (VGS) of 4.5V and a maximum continuous drain current of 11.7A at 25¬8C. The device is housed in a compact U-DFN2020-6 package, making it suitable for low-profile applications. It is ESD protected and fully compliant with RoHS standards, ensuring it is environmentally friendly. The operating temperature range is from -55¬8C to +150¬8C, allowing for versatility in various environments. This MOSFET is ideal for general-purpose interfacing switches and power management functions, making it a reliable choice for engineers looking for efficient switching solutions.

Datasheet Summary
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The DMN2011UFDF-7 is a 20V N-channel enhancement mode MOSFET designed for high efficiency power management applications. It features a low on-resistance of 9.5m,Ѷ at a gate-source voltage (VGS) of 4.5V and a maximum continuous drain current of 11.7A at 25¬8C. The device is housed in a compact U-DFN2020-6 package, making it suitable for low-profile applications. It is ESD protected and fully compliant with RoHS standards, ensuring it is environmentally friendly. The operating temperature range is from -55¬8C to +150¬8C, allowing for versatility in various environments. This MOSFET is ideal for general-purpose interfacing switches and power management functions, making it a reliable choice for engineers looking for efficient switching solutions.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2011UFDF-7 - 868943-DMN2011UFDF-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2011UFDF-7
868943-DMN2011UFDF-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2011UFDF-7 868943-DMN2011UFDF-7
Manufacturer: Diodes Incorporated Win Source Part Number: 868943-DMN2011UFDF-7 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 20 V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F) Package: 6-UDFN Exposed Pad Package: Reel - TR Mounting: Surface Mount Family Name: DMN2011 Categories: Discrete Semiconductor Products Case / Package: U-DFN2020-6 (Type F) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 89 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 31 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: DMN2011UFDF-7DIDKR, DMN2011UFDF-7DITR, DMN2011UFDF-7-ND, DMN2011UFDF-7DICT

Manufacturer: Diodes Incorporated
Win Source Part Number: 868943-DMN2011UFDF-7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 20 V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)
Package: 6-UDFN Exposed Pad
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMN2011
Categories: Discrete Semiconductor Products
Case / Package: U-DFN2020-6 (Type F)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 89 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 31 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMN2011UFDF-7DIDKR, DMN2011UFDF-7DITR, DMN2011UFDF-7-ND, DMN2011UFDF-7DICT

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMN2011UFDF-7DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMN2011UFDF-7DKR-ND
Single FETs, MOSFETs 31-DMN2011UFDF-7DKR-ND
N-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)

N-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMN2011UFDF-7CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMN2011UFDF-7CT-ND
Single FETs, MOSFETs 31-DMN2011UFDF-7CT-ND
N-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)

N-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMN2011UFDF-7TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMN2011UFDF-7TR-ND
Single FETs, MOSFETs 31-DMN2011UFDF-7TR-ND
N-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)

N-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)

Buy Now Datasheet
Singapore
20V 14.2A MOSFET Transistor
278-DMN2011UFDF-7
20V 14.2A MOSFET Transistor 278-DMN2011UFDF-7
MOSFET N-CH 20V 14.2A 6UDFN Product overview: DMN2011UFDF-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 14.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 14.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2011UFDF-7 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 14.2A 6UDFN Product overview: DMN2011UFDF-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 14.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 14.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2011UFDF-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2011UFDF-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2011UFDF-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2011UFDF-7
MOSFET N-CH 20V 14.2A 6UDFN

MOSFET N-CH 20V 14.2A 6UDFN

Supplier's Site
Single FETs, MOSFETs - DMN2011UFDF-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN2011UFDF-7
Single FETs, MOSFETs DMN2011UFDF-7
MOSFET N-CH 20V 14.2A 6UDFN

MOSFET N-CH 20V 14.2A 6UDFN

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K

MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K

Buy Now Datasheet
Mosfet, Aec-Q101, N-Ch, 20V, Udfn2020; Transistor Polarity Diodes Inc. - 12AC0702 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 20V, Udfn2020; Transistor Polarity Diodes Inc.
12AC0702
Mosfet, Aec-Q101, N-Ch, 20V, Udfn2020; Transistor Polarity Diodes Inc. 12AC0702
MOSFET, AEC-Q101, N-CH, 20V, UDFN2020; Transistor Polarity:N Channel; Continuous Drain Current Id:11.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 20V, UDFN2020; Transistor Polarity:N Channel; Continuous Drain Current Id:11.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 868943-DMN2011UFDF-7 31-DMN2011UFDF-7DKR-ND 278-DMN2011UFDF-7 DMN2011UFDF-7 DMN2011UFDF-7 DMN2011UFDF-7 12AC0702
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2011UFDF-7 Single FETs, MOSFETs 20V 14.2A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, Aec-Q101, N-Ch, 20V, Udfn2020; Transistor Polarity Diodes Inc.
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; U-DFN2020-6 (Type F) 6-UDFN Exposed Pad Tape & Reel (TR) 6-UDFN Exposed Pad 6-UDFN Exposed Pad TO-3
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts 20 volts
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