DIODES Incorporated Single FETs, MOSFETs DMN2011UFDE-7

N-Channel 20V 11.7A (Ta) 610mW (Ta) Surface Mount U-DFN2020-6 (Type E)

N-Channel 20V 11.7A (Ta) 610mW (Ta) Surface Mount U-DFN2020-6 (Type E)

N-Channel 20V 11.7A (Ta) 610mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Manufacturer: Diodes Incorporated
Win Source Part Number: 811655-DMN2011UFDE-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-UDFN Exposed Pad
Power Dissipation (Maximum): 610mW
Popularity: Low
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 9.5mOhm at 7A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2248pF at 10V
Current - Continuous Drain (Id) at 25°C: 11.7A
Vgs(th) (Maximum) at Id: 1V at 250μA
Part Number Series: DMN2011
Maximum Vgs: ±12V

MOSFET N-CH 20V 11.7A 6UDFN Product overview: DMN2011UFDE-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 11.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 11.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2011UFDE-7 can be used for catalog matching and distributor lookup.