MOSFET N-CH 20V 11.7A 6UDFN Product overview: DMN2011UFDE-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 11.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 11.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2011UFDE-7 can be used for catalog matching and distributor lookup.
N-Channel 20V 11.7A (Ta) 610mW (Ta) Surface Mount U-DFN2020-6 (Type E)
N-Channel 20V 11.7A (Ta) 610mW (Ta) Surface Mount U-DFN2020-6 (Type E)
N-Channel 20V 11.7A (Ta) 610mW (Ta) Surface Mount U-DFN2020-6 (Type E)
Manufacturer: Diodes Incorporated
Win Source Part Number: 811655-DMN2011UFDE-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-UDFN Exposed Pad
Power Dissipation (Maximum): 610mW
Popularity: Low
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 9.5mOhm at 7A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2248pF at 10V
Current - Continuous Drain (Id) at 25°C: 11.7A
Vgs(th) (Maximum) at Id: 1V at 250μA
Part Number Series: DMN2011
Maximum Vgs: ±12V
MOSFET N-CH 20V 11.7A 6UDFN
MOSFET, N-CH, 20V, 11.7A, U-DFN2020 ROHS COMPLIANT: YES
MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
MOSFET N-CH 20V 11.7A 6UDFN
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMN2011UFDE-7 | DMN2011UFDE-7DICT-ND | 811655-DMN2011UFDE-7 | DMN2011UFDE-7 | 36AJ3577 | DMN2011UFDE-7 | DMN2011UFDE-7 |
| Product Name | 20V 11.7A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - DMN2011UFDE-7 | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 11.7A, U-Dfn2020 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 1.97 milliwatts | 610 milliwatts | 610 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
