DIODES Incorporated Single FETs, MOSFETs DMN2009UFDF-7

The DMN2009UFDF-7 is a 20V N-channel enhancement mode MOSFET in a U-DFN2020-6 package with a 2.0mm × 2.0mm footprint and 0.6mm profile, designed for low-profile, high-efficiency power management applications. It features a maximum continuous drain current of 12.8A at 25°C with RDS(ON) of 9mΩ at VGS = 4.5V and 13mΩ at VGS = 2.5V. The device is RoHS compliant, halogen and antimony free, and qualified to AEC-Q200 standards. It has a thermal resistance of 56°C/W when mounted on a 2oz FR-4 PCB with a 1-inch square thermal pad. The package is molded plastic with a NiPdAu finish and is rated UL 94 V-0 with moisture sensitivity level 1 per J-STD-020.