N-Channel 20V 200mA (Ta) 400mW (Ta) Surface Mount X2-DFN1006-3
N-Channel 20V 200mA (Ta) 400mW (Ta) Surface Mount X2-DFN1006-3
N-Channel 20V 200mA (Ta) 400mW (Ta) Surface Mount X2-DFN1006-3
MOSFET N-CH 20V 200MA 3DFN Product overview: DMN2005LP4K-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 200MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2005LP4K-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 014411-DMN2005LP4K-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400mW (Ta)
Family Name: DMN2005LP4K
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 900mV @ 100μA
Max Input Capacitance: 41pF @ 3V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 10mA, 4V
Alternative Parts (Cross-Reference): NTNS3193NZT5G; DMN2005LP4K; DMN2005LPK-7; DMN2005LP4K-7; RV2C002UNT2L; RV2C002UNT2CL; NTNS3193NZT5G;
Introduction Date: December 20, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
20V 200mA 400mW 1.5Ω@4V,10mA 900mV@100uA N Channel X2-DFN1006-3 MOSFETs ROHS
MOSFET N-CH 20V 200MA 3DFN
MOSFET N-CH 20V 200MA 3DFN
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN2005LP4KDITR-ND | 278-DMN2005LP4K-7 | 014411-DMN2005LP4K-7 | DMN2005LP4K-7 | DMN2005LP4K-7 | DMN2005LP4K-7 | DMN2005LP4K-7 |
| Product Name | Single FETs, MOSFETs | 20V 200MA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2005LP4K-7 | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | 3-XFDFN | Tape & Reel (TR) | SOT3; X2-DFN1006-3 | 3-XFDFN | 3-XFDFN | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | |||
| Transconductance | 4.00E-5 kS |
