Mosfet Array 2 N-Channel (Dual) 20V 300mA 400mW Surface Mount X2-DFN1310-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 20V 300mA 400mW Surface Mount X2-DFN1310-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 20V 300mA 400mW Surface Mount X2-DFN1310-6 (Type B)
MOSFET 2N-CH 20V 0.3A 6-DFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 014409-DMN2005DLP4K-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: X2-DFN1310-6
Maximum Power Dissipation: 400mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 300mA
Gate-Source Threshold Voltage: 900mV @ 100μA
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 10mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
MOSFET, DUAL, N-CH, 20V, 0.3A ROHS COMPLIANT: YES
MOSFET 2N-CH 20V 0.3A 6DFN
MOSFET 2N-CH 20V 0.3A 6-DFN
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN2005DLP4KDITR-ND | DMN2005DLP4K-7 | 014409-DMN2005DLP4K-7 | 28AK8484 | DMN2005DLP4K-7 | 233-DMN2005DLP4K-7 | DMN2005DLP4K-7 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2005DLP4K-7 | Mosfet, Dual, N-Ch, 20V, 0.3A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 2N-CH 20V 0.3A 6-DFN | MOSFET |
| Package Type | 6-XFDFN Exposed Pad | 6-XFDFN Exposed Pad | SOT3; X2-DFN1310-6 | TO-3 | |||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| IDSS | 300 milliamps |
