Manufacturer: Diodes Incorporated
Win Source Part Number: 014409-DMN2005DLP4K-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: X2-DFN1310-6
Maximum Power Dissipation: 400mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 300mA
Gate-Source Threshold Voltage: 900mV @ 100μA
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 10mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 0.3A 6-DFN
MOSFET 2N-CH 20V 0.3A 6DFN Product overview: DMN2005DLP4K-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2005DLP4K-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 300mA 400mW Surface Mount X2-DFN1310-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 20V 300mA 400mW Surface Mount X2-DFN1310-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 20V 300mA 400mW Surface Mount X2-DFN1310-6 (Type B)
MOSFET 2N-CH 20V 0.3A 6-DFN
MOSFET, DUAL, N-CH, 20V, 0.3A ROHS COMPLIANT: YES
MOSFET 2N-CH 20V 0.3A 6DFN
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 014409-DMN2005DLP4K-7 | DMN2005DLP4K-7 | 289-DMN2005DLP4K-7 | DMN2005DLP4KDITR-ND | 233-DMN2005DLP4K-7 | DMN2005DLP4K-7 | 28AK8484 | DMN2005DLP4K-7 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2005DLP4K-7 | FET, MOSFET Arrays | 20V 0.3A MOSFET Transistor | FET, MOSFET Arrays | MOSFET 2N-CH 20V 0.3A 6-DFN | MOSFET | Mosfet, Dual, N-Ch, 20V, 0.3A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | ||||
| PD | 400 milliwatts | 350 milliwatts | 400 milliwatts | |||||
| TJ | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) | ||||
| Package Type | SOT3; X2-DFN1310-6 | 6-XFDFN Exposed Pad | Tape & Reel (TR) | 6-XFDFN Exposed Pad | TO-3 |
