MOSFET N-CH 20V 630MA SOT23-3
MOSFET N-CH 20V 630MA SOT23-3 Product overview: DMN2004K-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 630MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 630MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2004K-7 can be used for catalog matching and distributor lookup.
N-Channel 20V 630mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 630mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 630mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 014405-DMN2004K-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Family Name: DMN2004K
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 630mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Input Capacitance: 150pF @ 16V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 550 mOhm @ 540mA, 4.5V
Alternative Parts (Cross-Reference): AP2308GEN-HF; DMN2004K;
Introduction Date: July 27, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET N-CH 20V 630MA SOT23-3
MOSFET, N CHANNEL, 20V, 540mA, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:540mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
20V 630mA 550mΩ@4.5V,540mA 350mW 1V@250uA N Channel SOT-23 MOSFETs ROHS
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN2004K-7 | 278-DMN2004K-7 | DMN2004KDIDKR-ND | 014405-DMN2004K-7 | DMN2004K-7 | 25R4519 | DMN2004K-7 | DMN2004K-7 |
| Product Name | Single FETs, MOSFETs | 20V 630MA SOT23 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2004K-7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 20V, 540Ma, Sot-23; Channel Type Diodes Inc. | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | ||||
| IDSS | 630 milliamps | 540 milliamps | ||||||
| PD | 350 milliwatts | 350 milliwatts | 350 milliwatts | 350 milliwatts |
