MOSFET 2N-CH 20V 0.54A SOT-363
Mosfet Array 2 N-Channel (Dual) 20V 540mA 200mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 20V 540mA 200mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 20V 540mA 200mW Surface Mount SOT-363
Manufacturer: Diodes Incorporated
Win Source Part Number: 080566-DMN2004DWK-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN2004DWK
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 200mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 540mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Input Capacitance: 150pF @ 16V
Maximum Rds On at Id,Vgs: 550 mOhm @ 540mA, 4.5V
Alternative Parts (Cross-Reference): FDG6317NZ_Q; FDG6317NZ_NL; FDG6317NZ;
Introduction Date: July 20, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
MOSFET 2N-CH 20V 0.54A SOT363
20V 540mA 200mW 550mΩ@4.5V,540mA 1V@250uA 2 N-Channel SC-70-6(SOT-363) MOSFETs ROHS
MOSFET, AEC-Q101, DUAL N-CH, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN2004DWK-7 | DMN2004DWKDIDKR-ND | 080566-DMN2004DWK-7 | DMN2004DWK-7 | DMN2004DWK-7 | DMN2004DWK-7 | 99AC3923 | 233-DMN2004DWK-7 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2004DWK-7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Mosfet, Aec-Q101, Dual N-Ch, 20V, Sot363; Transistor Polarity Diodes Inc. | MOSFET Dual N-Channel |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | ||||
| IDSS | 540 milliamps | 540 milliamps | ||||||
| TJ | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) |
