DIODES Incorporated Single FETs, MOSFETs DMN14M8UFDF-13

The DMN14M8UFDF-13 is a 12V N-channel enhancement mode MOSFET in a U-DFN2020-6 package with a 4mm² PCB footprint, designed for low-profile, high-efficiency power-management applications. It features a maximum continuous drain current of 14.7A at 25°C with a gate-source voltage of 4.5V and an on-resistance of 6.0mΩ at 4.5V or 9.0mΩ at 2.5V. The device has a gate threshold voltage range of 0.45V to 1.2V and adheres to RoHS 3 and AEC-Q100/101/104/200 standards. It is rated for thermal resistance of 63.8°C/W under optimal PCB mounting and operates over a junction temperature range of -55°C to +150°C. The part is moisture-sensitive level 1, lead-free, and meets UL 94 V-0 flammability rating.