Win Source Part Number: 1120516-DMN10H700S-1
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 10,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Base Product Number: DMN10
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
MOSFET N-CH 100V 700MA SOT23
MOSFET N-CH 100V 700MA SOT23
N-Channel 100V 700mA (Ta) 400mW (Ta) Surface Mount SOT-23-3
MOSFET N-CH 100V 700MA SOT23
MOSFET, N-CH, 100V, 0.7A, SOT-23 ROHS COMPLIANT: YES
MOSFET N-CH 100V 700MA SOT23
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1120516-DMN10H700S-13 | DMN10H700S-13 | 31-DMN10H700S-13CT-ND | 28AK8468 | DMN10H700S-13 | DMN10H700S-13 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 0.7A, Sot-23 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 400 milliwatts | 400 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
