DIODES Incorporated FET, MOSFET Arrays DMN10H6D0LFDB-13

Dual N-channel enhancement mode MOSFET in a U-DFN2020-6 package, designed for high-efficiency power management with a drain-source voltage rating of 100 V, continuous drain current of 0.27 A at 25°C, and on-resistance of 6 Ω at VGS = 10 V and 10 Ω at VGS = 4.5 V. The device features ESD protection, fast switching, and low gate threshold voltage, and meets AEC-Q100/101/104/200, UL 94 V-0, and RoHS standards. Thermal resistance junction-to-ambient is 125 °C/W when mounted on a recommended FR-4 PCB, with an operating temperature range of -55°C to +150°C.