DIODES Incorporated Single FETs, MOSFETs DMN10H220LVT-7

MOSFET N-CH 100V 1.87A TSOT26

N-Channel 100V 1.87A (Ta) 1.67W (Ta) Surface Mount TSOT-23

MOSFET N-CH 100V 1.87A TSOT26

MOSFET N-CH 100V 1.87A TSOT26

MOSFET N-CH 100V 1.87A TSOT26 Product overview: DMN10H220LVT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.87A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.87A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H220LVT-7 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 723222-DMN10H220LVT-7
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Maximum): 1.67W
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 1.87A
Rds On (Maximum) at Id, Vgs: 220mOhm at 1.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.3nC at 10V
Gate Source Voltage (Maximum): ±16V
Input Capacitance (Ciss) (Maximum) at Vds: 401pF at 25V