DIODES Incorporated 61V 100V MOSFET Transistor DMN10H220LFDF-7

MOSFET BVDSS: 61V~100V U-DFN2020 Product overview: DMN10H220LFDF-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 61V, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 61V, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H220LFDF-7 can be used for catalog matching and distributor lookup.

MOSFET BVDSS: 61V~100V U-DFN2020

MOSFET BVDSS: 61V~100V U-DFN2020

MOSFET BVDSS: 61V~100V U-DFN2020

MOSFET BVDSS: 61V~100V U-DFN2020

Win Source Part Number: 1376880-DMN10H220LFDF-7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 46 pct.
REACH Status: REACH Unaffected
Mfr: Diodes Incorporated
Product Status: Active
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Base Product Number: DMN10
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
Power Dissipation (Max): 1.1W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
ECCN: EAR99