The Dual MOSFET, N-Ch/100V/10.5A in the PowerDI3333 package is designed for high-efficiency power management applications. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current rating of 10.5A at a case temperature of +25¬8C. The on-resistance (RDS(ON)) is specified at 222m,Ѷ when the gate-source voltage (VGS) is 10V and 270m,Ѷ at 4.5V, indicating low power loss during operation. This MOSFET is characterized by low input capacitance and fast switching speeds, making it suitable for load switch applications. It is fully RoHS compliant and manufactured in facilities certified to IATF 16949, ensuring quality for automotive applications. The device also has a low input/output leakage and is halogen and antimony-free, aligning with environmental standards. Thermal characteristics include a total power dissipation of 1.8W at +25¬8C and a thermal resistance from junction to ambient of 70¬8C/W. The operating temperature range is from -55¬8C to +150¬8C, providing versatility in various environments. The PowerDI3333-8 package is compact, facilitating space-efficient designs.
MOSFET 2N-CH 100V PWRDI3333
DUAL MOSFET, N-CH/100V/10.5A/POWE
MOSFET 2N-CH 100V PWRDI3333
| DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 31-DMN10H220LDV-7TR-ND | 12AJ7101 | DMN10H220LDV-7 |
| Product Name | FET, MOSFET Arrays | Dual Mosfet, N-Ch/100V/10.5A/powerdi3333 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 8-PowerVDFN | TO-3 |
