MOSFET N-CH 100V 2.6A TSOT26 Product overview: DMN10H170SVT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H170SVT-7 can be used for catalog matching and distributor lookup.
N-Channel 100V 2.6A (Ta) 1.2W (Ta) Surface Mount TSOT-23
N-Channel 100V 2.6A (Ta) 1.2W (Ta) Surface Mount TSOT-23
N-Channel 100V 2.6A (Ta) 1.2W (Ta) Surface Mount TSOT-23
Manufacturer: Diodes Incorporated
Win Source Part Number: 868930-DMN10H170SVT-
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 100 V 2.6A (Ta) 1.2W (Ta) Surface Mount TSOT-23
Package: SOT-23-6 Thin, TSOT-23-6
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMN10
Categories: Discrete Semiconductor Products
Case / Package: TSOT-23
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMN10H170SVT-7DICT, DMN10H170SVT-7DIDKR,
MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W
MOSFET N-CH 100V 2.6A TSOT26
MOSFET N-CH 100V 2.6A TSOT26
MOSFET, N-CH, 100V, 2.6A, TSOT-26 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN10H170SVT-7 | DMN10H170SVT-7DITR-ND | 868930-DMN10H170SVT-7 | DMN10H170SVT-7 | DMN10H170SVT-7 | DMN10H170SVT-7 | 28AK8462 |
| Product Name | 100V 2.6A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN10H170SVT-7 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 2.6A, Tsot-26 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 1.2 milliwatts | 1200 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
