MOSFET N-CH 100V PWRDI3333 Product overview: DMN10H170SFGQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H170SFGQ-13
Manufacturer: Diodes Incorporated
Win Source Part Number: 868929-DMN10H170SFGQ
Series: Automotive, AEC-Q101
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 100 V 2.9A (Ta), 8.5A (Tc) 940mW (Ta) Surface Mount PowerDI3333-8
Package: 8-PowerVDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMN10
Categories: Discrete Semiconductor Products
Case / Package: PowerDI3333-8
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
N-Channel 100V 2.9A (Ta), 8.5A (Tc) 940mW (Ta) Surface Mount PowerDI3333-8
MOSFET N-CH 100V PWRDI3333
MOSFET MOSFET BVDSS: 61V-100V
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN10H170SFGQ-13 | 868929-DMN10H170SFGQ-13 | DMN10H170SFGQ-13DI-ND | DMN10H170SFGQ-13 | DMN10H170SFGQ-13 |
| Product Name | 100V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN10H170SFGQ-13 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||
| PD | 2 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |