DIODES Incorporated FETs - Single - DMN10H170SFG-7 DMN10H170SFG-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 806714-DMN10H170SFG-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 940mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 122mOhm at 3.3A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 14.9nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 870.7pF at 25V
Current - Continuous Drain (Id) at 25°C: 2.9A , 8.5A (Tc)
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V

MOSFET N-CH 100V PWRDI3333

N-Channel 100V 2.9A (Ta), 8.5A (Tc) 940mW (Ta) Surface Mount PowerDI3333-8

MOSFET N-CH 100V PWRDI3333

MOSFET N-CH 100V PWRDI3333

MOSFET N-CH 100V PWRDI3333 Product overview: DMN10H170SFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H170SFG-7 can be used for catalog matching and distributor lookup.