MOSFET N-CH 100V PWRDI3333
MOSFET N-CH 100V PWRDI3333
N-Channel 100V 2.9A (Ta), 8.5A (Tc) 940mW (Ta) Surface Mount PowerDI3333-8
MOSFET N-CH 100V PWRDI3333
Manufacturer: Diodes Incorporated
Win Source Part Number: 806714-DMN10H170SFG-
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 940mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 122mOhm at 3.3A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 14.9nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 870.7pF at 25V
Current - Continuous Drain (Id) at 25°C: 2.9A , 8.5A (Tc)
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V
MOSFET N-CH 100V PWRDI3333 Product overview: DMN10H170SFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H170SFG-7 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 100V, 2.9A, POWERDI 3333 ROHS COMPLIANT: YES
MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
MOSFET N-CH 100V PWRDI3333
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN10H170SFG-7 | 31-DMN10H170SFG-7DKR-ND | 806714-DMN10H170SFG-7 | 278-DMN10H170SFG-7 | 28AK8460 | DMN10H170SFG-7 | DMN10H170SFG-7 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - DMN10H170SFG-7 | 100V MOSFET Transistor | Mosfet, N-Ch, 100V, 2.9A, Powerdi 3333 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 2900 milliamps | ||||||
| PD | 940 milliwatts | 940 milliwatts | 2 milliwatts |