MOSFET N-CH 100V 3.6A SOT223 Product overview: DMN10H120SE-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H120SE-13 can be used for catalog matching and distributor lookup.
N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223-3
N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223-3
N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033710-DMN10H120SE-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 549pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 3.6A SOT223
MOSFET, N-CH, 3.6A, 100V, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes
MOSFET N-CH 100V 3.6A SOT223
MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN10H120SE-13 | DMN10H120SE-13DIDKR-ND | 1033710-DMN10H120SE-13 | DMN10H120SE-13 | 39AH6593 | DMN10H120SE-13 | DMN10H120SE-13 |
| Product Name | 100V 3.6A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN10H120SE-13 | Single FETs, MOSFETs | Mosfet, N-Ch, 3.6A, 100V, Sot-223; Channel Type Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||
| PD | 2.1 milliwatts | 1300 milliwatts | 1300 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
