DIODES Incorporated 100V 3.6A MOSFET Transistor DMN10H120SE-13

Description
MOSFET N-CH 100V 3.6A SOT223 Product overview: DMN10H120SE-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H120SE-13 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 100V 3.6A SOT223 Product overview: DMN10H120SE-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H120SE-13 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
100V 3.6A MOSFET Transistor
278-DMN10H120SE-13
100V 3.6A MOSFET Transistor 278-DMN10H120SE-13
MOSFET N-CH 100V 3.6A SOT223 Product overview: DMN10H120SE-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H120SE-13 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 3.6A SOT223 Product overview: DMN10H120SE-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H120SE-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN10H120SE-13 - 1033710-DMN10H120SE-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN10H120SE-13
1033710-DMN10H120SE-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN10H120SE-13 1033710-DMN10H120SE-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1033710-DMN10H120SE- 13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 3.6A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 549pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 3.3A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033710-DMN10H120SE-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 549pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - DMN10H120SE-13 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN10H120SE-13
Single FETs, MOSFETs DMN10H120SE-13
MOSFET N-CH 100V 3.6A SOT223

MOSFET N-CH 100V 3.6A SOT223

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN10H120SE-13DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN10H120SE-13DIDKR-ND
Single FETs, MOSFETs DMN10H120SE-13DIDKR-ND
N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223-3

N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN10H120SE-13DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN10H120SE-13DICT-ND
Single FETs, MOSFETs DMN10H120SE-13DICT-ND
N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223-3

N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN10H120SE-13DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN10H120SE-13DITR-ND
Single FETs, MOSFETs DMN10H120SE-13DITR-ND
N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223-3

N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC

MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN10H120SE-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN10H120SE-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN10H120SE-13
MOSFET N-CH 100V 3.6A SOT223

MOSFET N-CH 100V 3.6A SOT223

Supplier's Site
Mosfet, N-Ch, 3.6A, 100V, Sot-223; Channel Type Diodes Inc. - 39AH6593 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 3.6A, 100V, Sot-223; Channel Type Diodes Inc.
39AH6593
Mosfet, N-Ch, 3.6A, 100V, Sot-223; Channel Type Diodes Inc. 39AH6593
MOSFET, N-CH, 3.6A, 100V, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

MOSFET, N-CH, 3.6A, 100V, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-DMN10H120SE-13 1033710-DMN10H120SE-13 DMN10H120SE-13 DMN10H120SE-13DIDKR-ND DMN10H120SE-13 DMN10H120SE-13 39AH6593
Product Name 100V 3.6A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN10H120SE-13 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 3.6A, 100V, Sot-223; Channel Type Diodes Inc.
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts 100 volts 100 volts
PD 2.1 milliwatts 1300 milliwatts 1300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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